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BLF647PS

NXP
Part Number BLF647PS
Manufacturer NXP
Description Broadband power LDMOS transistor
Published Jan 27, 2016
Detailed Description BLF647PS Broadband power LDMOS transistor Rev. 2 — 18 November 2013 Product data sheet 1. Product profile 1.1 General...
Datasheet PDF File BLF647PS PDF File

BLF647PS
BLF647PS

Overview
BLF647PS Broadband power LDMOS transistor Rev.
2 — 18 November 2013 Product data sheet 1.
Product profile 1.
1 General description A 200 W LDMOS RF power transistor for broadcast transmitter and industrial applications.
The transistor is suitable for the frequency range HF to 1500 MHz.
The excellent ruggedness and broadband performance of this device makes it ideal for digital applications.
Table 1.
Application information RF performance at Th = 25 C in a common source test circuit.
Test signal f VDS IDq PL(AV) (MHz) (V) (A) (W) Pulsed, class-B 1300 32 0.
1 - CW, class-B 1300 32 0.
1 200 2-tone, class-AB f1 = 1299.
95; f2 = 1300.
05 32 0.
7 75 PL(M) (W) 200 - Gp (dB) 17.
5 17.
5 19 D IMD3 (%) (dBc) 70 70 48 33 1.
2 Features and benefits  Integrated ESD protection  Excellent ruggedness  High power gain  High efficiency  Excellent reliability  Easy power control  Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.
3 Applications ...


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