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NE68035

Part Number	NE68035
Manufacturer	CEL
Description	NPN SILICON HIGH FREQUENCY TRANSISTOR
Published	Jan 28, 2016
Detailed Description	NoiseDFigure,INF(dB)SCONTINUED Associated Gain, GA (dB) SILICON TRANSISTOR NE680 SERIES NPN SILICON HIGH FREQUENCY TRA...
Datasheet	NE68035 PDF File

Overview

NoiseDFigure,INF(dB)SCONTINUED Associated Gain, GA (dB) SILICON TRANSISTOR NE680 SERIES NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz • LOW NOISE FIGURE: 1.
7 dB at 2 GHz 2.
6 dB at 4 GHz • HIGH ASSOCIATED GAIN: 12.
5 dB at 2 GHz 8.
0 dB at 4 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE DESCRIPTION The NE680 series of NPN epitaxial silicon transistors is designed for low noise, high gain and low cost applications.
Both the chip and micro-x versions are suitable for applications up to 6 GHz.
The NE680 die is also available in six different low cost plastic surface mount package styles.
The NE680's high fT makes it ideal for low voltage/low cur...

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