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NE68039R

CEL
Part Number NE68039R
Manufacturer CEL
Description NPN SILICON HIGH FREQUENCY TRANSISTOR
Published Jan 28, 2016
Detailed Description NoiseDFigure,INF(dB)SCONTINUED Associated Gain, GA (dB) SILICON TRANSISTOR NE680 SERIES NPN SILICON HIGH FREQUENCY TRA...
Datasheet PDF File NE68039R PDF File

NE68039R
NE68039R

Overview
NoiseDFigure,INF(dB)SCONTINUED Associated Gain, GA (dB) SILICON TRANSISTOR NE680 SERIES NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz • LOW NOISE FIGURE: 1.
7 dB at 2 GHz 2.
6 dB at 4 GHz • HIGH ASSOCIATED GAIN: 12.
5 dB at 2 GHz 8.
0 dB at 4 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE DESCRIPTION The NE680 series of NPN epitaxial silicon transistors is designed for low noise, high gain and low cost applications.
Both the chip and micro-x versions are suitable for applications up to 6 GHz.
The NE680 die is also available in six different low cost plastic surface mount package styles.
The NE680's high fT makes it ideal for low voltage/low current applications, down to as low as 0.
5 V / 0.
5 mA.
IC max for the NE680 series is 35 mA.
For higher current applications see the NE681 series.
00 (CHIP) 18 (SOT 343 STYLE) E B 35 (MICRO-X) 19 (3 PIN ULTRA SUPER MINI MOLD) NE68018 NOISE FIGURE & ASSOCIATED GAIN vs.
FREQUENCY 6V, 5 m A 3V, 5 mA 25 20 15 2.
5 10 2.
0 5 1.
5 1.
0 .
5 300 500 1000 2000 3000 Frequency, f (GHz) 30 (SOT 323 STYLE) 33 (SOT 23 STYLE) 39 (SOT 143 STYLE) 39R (SOT 143R STYLE) California Eastern Laboratories NE680 SERIES DISCONTINUED ELECTRICAL CHARACTERISTICS (TA = 25°C) SYMBOLS PART NUMBER EIAJ1 REGISTERED NUMBER PACKAGE OUTLINE PARAMETERS AND CONDITIONS fT NF GNF MAG |S21E|2 hFE ICBO IEBO CRE3 PT RTH (J-A) RTH (J- C) Gain Bandwidth Product at VCE = 6 V, IC = 10 mA Noise Figure at VCE = 6 V, IC = 5 mA, f = 1 GHz f = 2 GHz f = 4 GHz Associated Gain at VCE = 6 V, IC = 5 mA, f = 1 GHz f = 2 GHz f = 4 GHz Maximum Available Gain at VCE = 6 V, IC = 10 mA f = 1 GHz f = 2 GHz f = 4 GHz Insertion Power Gain at VCE = 6 V, IC = 10 mA, f = 1 GHz f = 2 GHz f = 4 GHz Forward Current Gain2 at VCE = 6 V, IC = 10 mA VCE = 3 V, IC = 5 mA Collector Cutoff Current at VCB = 10 V, IE = 0 mA Emitter Cutoff Current at VEB = 1V, IC = 0 mA Feedback Capacitance at VCB = 1 V, IE = 0 mA, f = 1 MHz Total Power Dis...


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