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4N70-R

Unisonic Technologies
Part Number 4N70-R
Manufacturer Unisonic Technologies
Description N-CHANNEL POWER MOSFET
Published Jan 29, 2016
Detailed Description UNISONIC TECHNOLOGIES CO., LTD 4N70-R Preliminary 4A, 700V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N70-R is a ...
Datasheet PDF File 4N70-R PDF File

4N70-R
4N70-R

Overview
UNISONIC TECHNOLOGIES CO.
, LTD 4N70-R Preliminary 4A, 700V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N70-R is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche.
This high speed switching power MOSFET is usually used in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.
 FEATURES * RDS(ON) < 2.
8Ω @VGS = 10 V * Ultra Low Gate Charge ( Typical 16nC ) * Low Reverse Transfer Capacitance ( CRSS = Typical 6 pF ) * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness  SYMBOL 1 Power MOSFET TO-220F1  ORDERING INFORMATION Note: Ordering Number Lead Free Halogen Free 4N70L-TF1-T 4N70G-TF1-T Pin Assignment: G: Gate D: Drain S: Source Package TO-220F1 Pin Assignment 123 GDS Packing Tube  MARKING INFORMATION PACKAGE TO-220F1 www.
unisonic.
com.
tw Copyright © 2014 Unisonic Technologies Co.
, Ltd MARKING 1 of 6 QW-R502-A66.
a 4N70-R Preliminary Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TA = 25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage Gate-Source Voltage VDSS 700 V VGSS ±30 V Avalanche Current (Note 2) Drain Current Continuous Pulsed (Note 2) Avalanche Energy Single Pulsed (Note 3) IAR ID IDM EAS 4A 4A 16 A 55 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.
5 V/ns Power Dissipation PD 36 W Junction Temperature Operating Temperature TJ TOPR +150 -55 ~ +150 °С °С Storage Temperature TSTG -55 ~ +150 °С Notes: 1.
Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2.
Repetitive Rating : Pulse width limited by maximum junction temperature 3.
L = 6.
87mH, IAS = 4A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 4.
ISD≤ 4.
4A, di/dt ≤200A/μs, VDD≤ BVDSS, Star...


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