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4N70

Inchange Semiconductor
Part Number 4N70
Manufacturer Inchange Semiconductor
Description N-Channel MOSFET Transistor
Published Jul 11, 2016
Detailed Description isc N-Channel Mosfet Transistor 4N70 ·FEATURES ·Low RDS(on) = 2.5Ω(MAX) ·Improved Gate Charge ·Fast Switching Speed ·M...
Datasheet PDF File 4N70 PDF File

4N70
4N70

Overview
isc N-Channel Mosfet Transistor 4N70 ·FEATURES ·Low RDS(on) = 2.
5Ω(MAX) ·Improved Gate Charge ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching mode power supplies ·DC-DC & DC-AC converter ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 700 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 4 A IDM Drain Current-Single Plused 16 A Ptot Total Dissipation@TC=25℃ 36 W Tj Max.
Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 40 ℃/W isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)DS...


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