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1SV323

Toshiba Semiconductor
Part Number 1SV323
Manufacturer Toshiba Semiconductor
Description Silicon Diode
Published Mar 23, 2005
Detailed Description TOSHIBA Diode Silicon Epitaxial Planar Type 1SV323 1SV323 TCXO/VCO • High capacitance ratio: C1V / C4V = 4.3 (typ.) •...
Datasheet PDF File 1SV323 PDF File

1SV323
1SV323

Overview
TOSHIBA Diode Silicon Epitaxial Planar Type 1SV323 1SV323 TCXO/VCO • High capacitance ratio: C1V / C4V = 4.
3 (typ.
) • Low series resistance: rs = 0.
4 Ω (typ.
) • Useful for small size tuner.
Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Reverse voltage Junction temperature Storage temperature range VR 10 V Tj 125 °C Tstg −55 to 125 °C Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the ab...


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