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2SK3666

ON Semiconductor
Part Number 2SK3666
Manufacturer ON Semiconductor
Description N-Channel JFET
Published Feb 7, 2016
Detailed Description Ordering number : EN8158C 2SK3666 N-Channel JFET 30V, 0.6 to 3.0mA, 6.5mS, CP http://onsemi.com Applications • Low-...
Datasheet PDF File 2SK3666 PDF File

2SK3666
2SK3666

Overview
Ordering number : EN8158C 2SK3666 N-Channel JFET 30V, 0.
6 to 3.
0mA, 6.
5mS, CP http://onsemi.
com Applications • Low-frequency general-purpose amplifier, impedance conversion, infrared sensor applications Features • Small IGSS • Small Ciss Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature Storage Temperature Symbol VDSX VGDS IG ID PD Tj Tstg Conditions Ratings 30 --30 10 10 200 150 --55 to +150 Unit V V mA mA mW °C °C Stresses exceeding those listed in the Maximum Ratings table may damage the device.
If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
Package Dimensions unit : mm (typ) 7013A-011 Product & Package Information • Package : CP • JEITA, JEDEC : SC-59, TO-236, SOT-23, TO-236AB • Minimum Packing Quantity : 3,000 pcs.
/reel 2.
9 3 0.
1 2SK3666-2-TB-E 2SK3666-3-TB-E Packing Type: TL Marking 0.
05 1.
1 2.
5 0.
3 0.
5 1.
5 0.
5 LOT No.
RANK LOT No.
1 0.
95 2 0.
4 1 : Source 2 : Drain 3 : Gate CP TB Electrical Connection 3 12 JK ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet.
Semiconductor Components Industries, LLC, 2014 April, 2014 40414HK TC-00003105/62012TKIM/D2805IMMS/31505TSIM GB No.
8158-1/4 2SK3666 Electrical Characteristics at Ta=25°C Parameter Gate-to-Drain Breakdown Voltage Gate Cutoff Current Cutoff Voltage Drain Current Forward Transfer Admittance Input Capacitance Reverse Transfer Capacitance Static Drain-to-Source On-State Resistance Symbol V(BR)GDS IGSS VGS(off) IDSS | yfs | Ciss Crss RDS(on) Conditions IG=--10mA, VDS=0V VGS=--20V, VDS=0V VDS=10V, ID=1mA VDS=10V, VGS=0V VDS=10V, VGS=0V, f=1kHz VDS=10V, VGS=0V, f=1MHz VDS=10V, VGS=0V, f=1MHz VDS=10mV, VGS=10V min --30 Ratings typ --0.
18 0.
6* 3.
0 --0.
95 6.
5 4 1.
1 200 max --1.
0 --2.
2 3.
0* Unit V nA V ...


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