DatasheetsPDF.com

CED02N7G-1

CET
Part Number CED02N7G-1
Manufacturer CET
Description N-Channel MOSFET
Published Feb 9, 2016
Detailed Description CED02N7G-1/CEU02N7G-1 N-Channel Enhancement Mode Field Effect Transistor FEATURES 720V, 1.6A, RDS(ON) = 6.75Ω @VGS = 10...
Datasheet PDF File CED02N7G-1 PDF File

CED02N7G-1
CED02N7G-1

Overview
CED02N7G-1/CEU02N7G-1 N-Channel Enhancement Mode Field Effect Transistor FEATURES 720V, 1.
6A, RDS(ON) = 6.
75Ω @VGS = 10V.
750V@Tc=150 C Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-251 & TO-252 package.
D D G S CEU SERIES TO-252(D-PAK) G DS CED SERIES TO-251(I-PAK) G S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C @ TC = 100 C Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Single Pulsed Avalanche Energy d Single Pulsed Avalanche Current d Symbol VDS VGS ID IDM PD EAS IAS Limit 720 750 ±30 1.
6 1.
1 6.
4 48 0.
38 11.
25 1.
5 (Tc=25 C) (Tc=150 C) Operating and Store Temperature Range TJ,Tstg -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 2.
6 50 Units V V V A A A W W/ C mJ A C Units C/W C/W Details are subject to change without notice .
1 Rev 1.
2012.
May http://www.
cetsemi.
com CED02N7G-1/CEU02N7G-1 Electrical Characteristics Tc = 25 C unless otherwise noted Parameter Symbol Test Condition Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b BVDSS IDSS IGSSF IGSSR Tc=25 C,VGS = 0V, ID = 250uA Tc=150 C,VGS = 0V, ID = 250uA VDS = 700V, VGS = 0V VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V Gate Threshold Voltage Static Drain-Source On-Resistance VGS(th) RDS(on) VGS = VDS, ID = 250µA VGS = 10V, ID = 1A Dynamic Characteristics c Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c gFS Ciss Coss Crss VDS = 50V, ID = 1A VDS = 25V, VGS = 0V, f = 1.
0 MHz Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time td(on) tr td(off) VDD = 300V, ID = 1.
9A, V...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)