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CED02N7G

Chino-Excel Technology
Part Number CED02N7G
Manufacturer Chino-Excel Technology
Description N-Channel MOSFET
Published Mar 11, 2011
Detailed Description N-Channel Enhancement Mode Field Effect Transistor FEATURES 700V, 1.6A, RDS(ON) = 6.75Ω @VGS = 10V. Super high dense cel...
Datasheet PDF File CED02N7G PDF File

CED02N7G
CED02N7G

Overview
N-Channel Enhancement Mode Field Effect Transistor FEATURES 700V, 1.
6A, RDS(ON) = 6.
75Ω @VGS = 10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-251 & TO-252 package.
CED02N7G/CEU02N7G D D G S CEU SERIES TO-252(D-PAK) G D G S CED SERIES TO-251(I-PAK) S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C @ TC = 100 C Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Single Pulsed Avalanche Energy d Single Pulsed Avalanche Current d Operating and Store Temperature Range Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD EAS IAS TJ,Tstg 700 Units V V A A A W W/ C mJ A C ±30 1.
6 1.
1 6.
4 48 0.
38 11.
25 1.
5 -55 to 150 Thermal Characteristics Parameter Symbol RθJC RθJA Limit 2.
6 50 Units C/W C/W www.
DataSheet4U.
com Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Details are subject to change without notice .
1 Rev 4.
2011.
Jan http://www.
cetsemi.
com CED02N7G/CEU02N7G Electrical Characteristics Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics c Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b td(on) tr td(off) tf Qg Qgs Qgd IS VSD VGS = 0V, IS = 1A VDS = 480V, ID = 1.
9A, VGS = 10V VDD = 300V, ID = 1.
9A, VGS = 10V, RGEN = 18Ω 14 12.
5 23 10 9 1.
5 5 1.
6 1.
5 ns ns ns ns nC nC nC A V gFS Ciss Coss Crss VDS = 50V, ID = 1A VDS = 25V, VGS = 0V, f = 1.
0 MHz 1.
5 315 55 20 S ...


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