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HBL1008

ON Semiconductor
Part Number HBL1008
Manufacturer ON Semiconductor
Description 1-Channel ESD Protector
Published Feb 10, 2016
Detailed Description HBL1008 Advance Information 1-Channel ESD Protector Product Description The HBL1008 provides robust ESD protection for s...
Datasheet PDF File HBL1008 PDF File

HBL1008
HBL1008

Overview
HBL1008 Advance Information 1-Channel ESD Protector Product Description The HBL1008 provides robust ESD protection for sensitive parts that may be subjected to electrostatic discharge (ESD).
The tiny form factor means it can be used in very confined spaces.
The electrical ‘back−to−back Zener’ configuration provides symmetrical ESD protection in cases where nodes with AC signals are present.
This device is designed and characterized to safely dissipate ESD strikes of at least ±3 kV, according to the MIL−STD−883 (Method 3015) specification for Human Body Model (HBM) ESD.
Features • Compact Die Protects from ESD Discharges • Almost no Conduction at Signal Amplitudes less than ±4 V • ESD Protection to over ±8 V Contact Discharge per MIL_STD_883 International ESD Standard • These Devices are Pb−Free and are RoHS Compliant Applications • LED Lighting • Modules • Interface Circuits http://onsemi.
com ELECTRICAL SCHEMATIC Au (Gold) on Topside (Signal Node) Au (Gold) on Topside (Reference Node) Silicon Substrate on Backside Table 1.
ORDERING INFORMATION† Ordering Part Number Topside Metal Part Numbering Information Back Metal BG Thickness HBL1008−RP Gold (Au) None (Si Substrate) 6 mils NOTE: Contact your sales representative for other ordering options.
Inking? Yes Shipping Method Die on tape in ring−pack This document contains information on a new product.
Specifications and information herein are subject to change without notice.
© Semiconductor Components Industries, LLC, 2015 April, 2015 − Rev.
P2 1 Publication Order Number: HBL1008/D HBL1008 SPECIFICATIONS Table 2.
OPERATING CONDITIONS Parameter Operating Temperature Range Storage Temperature Range Rating −40 to +130 −55 to +130 Units °C °C Table 3.
ELECTRICAL OPERATING CHARACTERISTICS Symbol Parameter Conditions ILEAK Leakage Current V = ±4 V, T = 25°C V = ±7 V, T = 25°C VBD Breakdown Voltage T = 25°C at ±20.
0 mA VESD ESD Voltage Rating Contact Discharge per Human Body Model, MIL−STD−8...


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