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HBL1010

ON Semiconductor
Part Number HBL1010
Manufacturer ON Semiconductor
Description 1-Channel ESD Protector
Published Feb 10, 2016
Detailed Description HBL1010 1-Channel ESD Protector Product Description The HBL1010 provides robust ESD protection for sensitive parts that ...
Datasheet PDF File HBL1010 PDF File

HBL1010
HBL1010

Overview
HBL1010 1-Channel ESD Protector Product Description The HBL1010 provides robust ESD protection for sensitive parts that may be subjected to electrostatic discharge (ESD).
The tiny form factor means it can be used in very confined spaces.
The electrical ‘back−to−back Zener’ configuration provides symmetrical ESD protection in cases where nodes with AC signals are present.
This device is designed and characterized to safely dissipate ESD strikes of at least ±8 kV, according to the MIL−STD−883 (Method 3015) specification for Human Body Model (HBM) ESD.
Features • Compact Die Protects from ESD Discharges • Almost no Conduction at Signal Amplitudes less than ±4 V • ESD Protection to over ±8 kV Contact Discharge per MIL_STD_883 International ESD Standard • These Devices are Pb−Free and are RoHS Compliant Applications • LED Lighting • Modules • Interface Circuits www.
onsemi.
com ELECTRICAL SCHEMATIC AuSn (Gold−Tin) on Topside (Signal Node) AuSn (Gold−Tin) on Topside (Reference Node) Silicon Substrate on Backside Table 1.
ORDERING INFORMATION† Ordering Part Number HBL1010RP Topside Metal Gold−Tin (AuSn) Part Numbering Information Back Metal BG Thickness None (Si Substrate) 4 mils NOTE: Contact your sales representative for other ordering options.
Inking? No Shipping Method Die on tape in ring−pack © Semiconductor Components Industries, LLC, 2015 February, 2015 − Rev.
0 1 Publication Order Number: HBL1010/D HBL1010 SPECIFICATIONS Table 2.
OPERATING CONDITIONS Parameter Operating Temperature Range Storage Temperature Range Rating −40 to +130 −55 to +130 Units °C °C Table 3.
ELECTRICAL OPERATING CHARACTERISTICS Symbol Parameter Conditions Min Typ Max Units ILEAK Leakage Current V = ±4 V, T = 25°C V = ±7 V, T = 25°C ±0.
1 ±1 ±10 ±100 mA mA VBD Breakdown Voltage T = 25°C at ±20.
0 mA ±7.
3 ±8 ±8.
9 V VESD ESD Voltage Rating Contact Discharge per Human Body Model, MIL−STD−883 (Method 3015) T = 25°C (Note 1) ±8 kV CT Capacitance Temp Coefficien...


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