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FCP190N60

Fairchild Semiconductor
Part Number FCP190N60
Manufacturer Fairchild Semiconductor
Description N-Channel MOSFET
Published Feb 15, 2016
Detailed Description FCP190N60 / FCPF190N60 — N-Channel SuperFET® II MOSFET FCP190N60 / FCPF190N60 N-Channel SuperFET® II MOSFET 600 V, 20.2...
Datasheet PDF File FCP190N60 PDF File

FCP190N60
FCP190N60

Overview
FCP190N60 / FCPF190N60 — N-Channel SuperFET® II MOSFET FCP190N60 / FCPF190N60 N-Channel SuperFET® II MOSFET 600 V, 20.
2 A, 199 mΩ December 2014 Features • 650 V @ TJ = 150°C • Typ.
RDS(on) = 170 mΩ • Ultra Low Gate Charge (Typ.
Qg = 57 nC) • Low Effective Output Capacitance (Typ.
Coss(eff.
) = 160 pF) • 100% Avalanche Tested • RoHS Compliant Applications • LCD / LED / PDP TV Lighting • Solar Inverter • AC-DC Power Supply Description SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.
This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy.
Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
D GDS TO-220 GDS TO-220F G Absolute Maximum Ratings TC = 25oC unless otherwise noted.
Symbol Parameter VDSS VGSS ID IDM EAS IAR EAR dv/dt PD Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current - DC - AC - Continuous (TC = 25oC) - Continuous (TC = 100oC) - Pulsed Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy MOSFET dv/dt Peak Diode Recovery dv/dt Power Dissipation (TC = 25oC) - Derate Above 25oC (f > 1 Hz) (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) TJ, TSTG TL Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds *Drain current limited by maximum junction temperature.
S FCP190N60 FCPF190N60 600 ±20 ±30 20.
2 20.
2* 12.
7 12.
7* 60.
6 60.
6* 400 4.
0 2.
1 100 20 208 39 1.
67 0.
31 -55 to +150 300 Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FCP190N60 0.
6 62.
5 FCPF190N60 3.
2 62.
5 Unit V V A...


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