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FDD86250

Fairchild Semiconductor
Part Number FDD86250
Manufacturer Fairchild Semiconductor
Description N-Channel MOSFET
Published Feb 15, 2016
Detailed Description FDD86250 N-Channel Shielded Gate PowerTrench® MOSFET FDD86250 April 2015 N-Channel Shielded Gate PowerTrench® MOSFET ...
Datasheet PDF File FDD86250 PDF File

FDD86250
FDD86250

Overview
FDD86250 N-Channel Shielded Gate PowerTrench® MOSFET FDD86250 April 2015 N-Channel Shielded Gate PowerTrench® MOSFET 150 V, 51 A, 22 mΩ Features General Description „ Shielded Gate MOSFET Technology „ Max rDS(on) = 22 mΩ at VGS = 10 V, ID = 8 A „ Max rDS(on) = 31 mΩ at VGS = 6 V, ID = 6.
5 A „ 100% UIL tested „ RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology.
This process has been optimized for the on-state resistance and yet maintain superior switching performance.
Application „ DC - DC Conversion D G S D DT O-P-2A5K2 (T O -25 2) G S MOSFET Maximum Ratings TC = 25 °C unless otherwise noted.
Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Continuous -Continuous -Pulsed TC = 25 °C TC = 100 °C TA = 25 °C Single Pulse Avalanche Energy Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C Operating and Storage Junction Temperature Range Thermal Characteristics (Note 5) (Note 5) (Note 1a) (Note 4) (Note 3) (Note 1a) Ratings 150 ±20 51 27 8 164 180 132 3.
1 -55 to +150 Units V V A mJ W °C RθJC RθJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Package Marking and Ordering Information 0.
94 (Note 1a) 40 °C/W Device Marking FDD86250 Device FDD86250 Package D-PAK(TO-252) Reel Size 13 ’’ Tape Width 16 mm Quantity 2500 units ©2010 Fairchild Semiconductor Corporation 1 FDD86250 Rev.
2.
0 www.
fairchildsemi.
com FDD86250 N-Channel Shielded Gate PowerTrench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted.
Symbol Parameter Test Conditions Min.
Typ.
Max.
Units Off Characteristics BVDSS ΔBVDSS ΔTJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250 μA, VGS = 0 V 150 ID = 250 μA, referenced to 25 °C V...


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