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FDD86252

Fairchild Semiconductor
Part Number FDD86252
Manufacturer Fairchild Semiconductor
Description N-Channel MOSFET
Published Feb 15, 2016
Detailed Description FDD86252 N-Channel Shielded Gate PowerTrench® MOSFET FDD86252 N-Channel Shielded Gate PowerTrench® MOSFET 150 V, 27 A, ...
Datasheet PDF File FDD86252 PDF File

FDD86252
FDD86252

Overview
FDD86252 N-Channel Shielded Gate PowerTrench® MOSFET FDD86252 N-Channel Shielded Gate PowerTrench® MOSFET 150 V, 27 A, 52 mΩ March 2015 Features General Description „ Shielded Gate MOSFET Technology „ Max rDS(on) = 52 mΩ at VGS = 10 V, ID = 5 A „ Max rDS(on) = 72 mΩ at VGS = 6 V, ID = 4 A „ 100% UIL tested „ RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology.
This process has been optimized for the on-state resistance and yet maintain superior switching performance.
Application „ DC - DC Conversion D G S D DT O-P-2A5K2 (T O -25 2) G S MOSFET Maximum Ratings TC = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Continuous -Pulsed TC = 25 °C TA = 25 °C Single Pulse Avalanche Energy Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C Operating and Storage Junction Temperature Range Thermal Characteristics (Note 1a) (Note 4) (Note 3) (Note 1a) Ratings 150 ±20 27 5 30 72 89 3.
1 -55 to +150 Units V V A mJ W °C RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Package Marking and Ordering Information 1.
4 (Note 1a) 40 °C/W Device Marking FDD86252 Device FDD86252 Package D-PAK(TO-252) Reel Size 13 ’’ Tape Width 16 mm Quantity 2500 units ©2012 Fairchild Semiconductor Corporation 1 FDD86252 Rev.
1.
6 www.
fairchildsemi.
com FDD86252 N-Channel Shielded Gate PowerTrench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS ΔBVDSS ΔTJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250 μA, VGS = 0 V 150 ID = 250 μA, referenced to 25 °C VDS = 120 V, VGS = 0 V VGS = ±20 V, VDS = 0 V V 104 mV/°...


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