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F59L1G81A

Elite Semiconductor
Part Number F59L1G81A
Manufacturer Elite Semiconductor
Description 1 Gbit (128M x 8) 3.3V NAND Flash Memory
Published Feb 16, 2016
Detailed Description ESMT Flash FEATURES z Voltage Supply: 2.6V ~ 3.6V z Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register...
Datasheet PDF File F59L1G81A PDF File

F59L1G81A
F59L1G81A

Overview
ESMT Flash FEATURES z Voltage Supply: 2.
6V ~ 3.
6V z Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit z Automatic Program and Erase - Page Program: (2K + 64) bytes - Block Erase: (128K + 4K) bytes z Page Read Operation - Page Size: (2K + 64) bytes - Random Read: 25us (Max.
) - Serial Access: 25ns (Min.
) z Memory Cell: 1bit/Memory Cell z Fast Write Cycle Time - Program time: 200us (Typ.
) - Block Erase time: 1.
5ms (Typ.
) z Command/Address/Data Multiplexed I/O Port z Hardware Data Protection - Program/Erase Lockout During Power Transitions z Reliable CMOS Floating Gate Technology z Endurance: - 100K Program/Erase Cycles (with 1 bit/528 bytes ECC) - Data Retention: 10 Years z Command Driven Operation z Cache Program Operation for High Performance Program z Copy-Back Operation z No Bad-Block-Erasing-Protect function (user should manage bad blocks before erasing) F59L1G81A 1 Gbit (128M x 8) 3.
3V NAND Flash Memory ORDERING INFORMATION Product ID Speed Package F59L1G81A -25TG 25 ns 48 pin TSOPI F59L1G81A -25BG 25 ns 63 ball BGA Comments Pb-free Pb-free GENERAL DESCRIPTION Offered in 128Mx8 bits, this device is 1Gbit with spare 32Mbit capacity.
The device is offered in 3.
3V VCC.
Its NAND cell provides the most cost effective solution for the solid state mass storage market.
A program operation can be performed in typical 200us on the 2,112-byte page and an erase operation can be performed in typical 1.
5ms on a (128K+4K) bytes block.
Data in the data register can be read out at 25ns cycle time per byte.
The I/O pins serve as the ports for address and data input/output as well as command input.
The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data.
Even the write-intensive systems can take advantage of this device’s extended reliability of 100K program/erase cycles by providing ECC (Error Correcting Code) with real time ...


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