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UF830-F

Unisonic Technologies
Part Number UF830-F
Manufacturer Unisonic Technologies
Description N-CHANNEL POWER MOSFET
Published Feb 19, 2016
Detailed Description UNISONIC TECHNOLOGIES CO., LTD UF830-F 4.5A, 500V, 1.5Ω, N-CHANNEL POWER MOSFET  DESCRIPTION The N-Channel enhancement ...
Datasheet PDF File UF830-F PDF File

UF830-F
UF830-F

Overview
UNISONIC TECHNOLOGIES CO.
, LTD UF830-F 4.
5A, 500V, 1.
5Ω, N-CHANNEL POWER MOSFET  DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.
 FEATURES * RDS(ON) <1.
5Ω @ VGS=10V, ID=2.
5A * Single Pulse Avalanche Energy Rated * Rugged- SOA is Power Dissipation Limited * Fast Switching Speeds * Linear Transfer Characteristics * High Input Impedance  SYMBOL Power MOSFET  ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package UF830L-TA3-T UF830G-TA3-T TO-220 UF830L-TF3-T UF830G-TF3-T TO-220F UF830L-TMS-T UF830G-TMS-T TO-251S UF830L-TN3-R UF830G-TN3-R TO-252 Note: Pin Assignment: G: Gate D: Drain S: Source Pin Assignment 123 GDS GDS GDS GDS Packing Tube Tube Tube Tape Reel  MARKING www.
unisonic.
com.
tw Copyright © 2015 Unisonic Technologies Co.
, Ltd 1 of 6 QW-R502-A94.
B UF830-F Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TA = 25°C, Unless Otherwise Specified.
) PARAMETER SYMBOL RATINGS UNIT Drain to Source Voltage (TJ=25°C ~125°C) VDS 500 V Drain to Gate Voltage (RGS=20kΩ, TJ=25°C ~125°C) VDGR 500 V Gate to Source Voltage Drain Current Continuous Pulsed TO-220 VGS ID IDM ±30 V 4.
5 A 18 A 73 W Power Dissipation (TC = 25°C) TO-220F PD 38 W TO-251S/TO-252 46 W Single Pulse Avalanche Energy Rating (Note 2) Junction Temperature EAS TJ 300 +150 mJ °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1.
Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2.
VDD=50V, starting TJ =25°C, L=25mH, RG=25Ω, peak IAS=4.
5A  THERMAL DATA PARAMETER Junction to Ambient Junction to Case TO-220 TO-220F TO-251S/TO-252 TO-220 TO-220F TO-251S/TO-252 SYMBOL θJA θJC RATINGS 62.
5 62.
5 100.
3 1.
71 3.
31 2.
7 UNIT °C/W °C/W °...


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