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UF830-E

Unisonic Technologies
Part Number UF830-E
Manufacturer Unisonic Technologies
Description N-CHANNEL POWER MOSFET
Published Feb 19, 2016
Detailed Description UNISONIC TECHNOLOGIES CO., LTD UF830-E 4.5A, 500V, 1.5Ω, N-CHANNEL POWER MOSFET  DESCRIPTION The N-Channel enhancement...
Datasheet PDF File UF830-E PDF File

UF830-E
UF830-E

Overview
UNISONIC TECHNOLOGIES CO.
, LTD UF830-E 4.
5A, 500V, 1.
5Ω, N-CHANNEL POWER MOSFET  DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.
 FEATURES * RDS(ON) < 1.
5Ω@ VGS=10V, ID=2.
5A * Single Pulse Avalanche Energy Rated * Rugged- SOA is Power Dissipation Limited * Fast Switching Speeds * Linear Transfer Characteristics * High Input Impedance  SYMBOL 1 Power MOSFET TO-220  ORDERING INFORMATION Ordering Number Lead Free Halogen Free UF830L-TA3-T UF830G-TA3-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220 Pin Assignment 123 GDS Packing Tube  MARKING www.
unisonic.
com.
tw Copyright © 2014 Unisonic Technologies Co.
, Ltd 1 of 8 QW-R502-993.
B UF830-E Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TA = 25°C, Unless Otherwise Specified.
) PARAMETER SYMBOL RATINGS UNIT Drain to Source Vol...


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