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FQA10N80C_F109

Fairchild Semiconductor
Part Number FQA10N80C_F109
Manufacturer Fairchild Semiconductor
Description N-Channel QFET MOSFET
Published Feb 23, 2016
Detailed Description FQA10N80C_F109 — N-Channel QFET® MOSFET FQA10N80C_F109 N-Channel QFET® MOSFET 800 V, 10 A, 1.1 Ω Features • 10 A, 800 V...
Datasheet PDF File FQA10N80C_F109 PDF File

FQA10N80C_F109
FQA10N80C_F109

Overview
FQA10N80C_F109 — N-Channel QFET® MOSFET FQA10N80C_F109 N-Channel QFET® MOSFET 800 V, 10 A, 1.
1 Ω Features • 10 A, 800 V, RDS(on) = 1.
1 Ω (Max.
) @ VGS = 10 V, ID = 5 A • Low Gate Charge (Typ.
44 nC) • Low Crss (Typ.
15 pF) • 100% Avalanche Tested • RoHS compliant March 2014 Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.
This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.
These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
D G D S TO-3PN G MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Drain Current Drain Current -Continuous (TC = 25oC) -Continuous (TC = 100oC) - Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25oC) - Derate above 25oC Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction to Case, Max Thermal Resistance, Junction to Ambient, Max S FQA10N80C_F109 800 10 6.
32 40 ± 30 920 10 24 4.
0 240 1.
92 -55 to +150 300 FQA10N80C_F109 0.
52 40 Unit V A A A V mJ A mJ V/ns W W/°C °C °C Unit oC/W oC/W ©2006 Fairchild Semiconductor Corporation FQA10N80C_F109 Rev.
C2 1 www.
fairchildsemi.
com FQA10N80C_F109 — N-Channel QFET® MOSFET Package Marking and Ordering Information Part Number FQA10N80C_F109 Top Mark FQA10N80C Package TO-3PN Packing Method Tube Reel Size N/A Tape Width N/A Quantity 30 units Electrical Characteristics TC = 25°C unless otherwise not...


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