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PJD1NA50

Pan Jit International
Part Number PJD1NA50
Manufacturer Pan Jit International
Description 500V N-Channel MOSFET
Published Feb 27, 2016
Detailed Description PPJN1NA50 / PJW1NA50 / PJU1NA50 / PJD1NA50 500V N-Channel MOSFET Voltage 500 V Current 1A Features  RDS(ON), VGS@1...
Datasheet PDF File PJD1NA50 PDF File

PJD1NA50
PJD1NA50

Overview
PPJN1NA50 / PJW1NA50 / PJU1NA50 / PJD1NA50 500V N-Channel MOSFET Voltage 500 V Current 1A Features  RDS(ON), VGS@10V,ID@0.
5A<9Ω  High switching speed  Improved dv/dt capability  Low Gate Charge  Low reverse transfer capacitance  Lead free in compliance with EU RoHS 2011/65/EU directive.
 Green molding compound as per IEC61249 Std.
(Halogen Free) TO-92 SOT-223 TO-252 TO-251AB Mechanical Data  Case : TO-251AB, TO-252, SOT-223, TO-92 Package  Terminals : Solderable per MIL-STD-750, Method 2026  TO-251AB Approx.
Weight : 0.
0104 ounces, 0.
297grams  TO-252 Approx.
Weight : 0.
0104 ounces, 0.
297grams  SOT-223 Approx.
Weight : 0.
043 ounces, 0.
123grams  TO-92 Approx.
Weight : 0.
007 ounces, 0.
196grams Maximum Ratings and Thermal Characteristics o (TA=25 C unless otherwise noted) PARAMETER SYMBOL TO-251AB TO-252 SOT-223 TO-92 Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Single Pulse Avalanche Energy (Note 1) Power Dissipation TC=25oC Derate above 25oC Operating Junction and Storage Temperature Range Typical Thermal resistance - Junction to Case - Junction to Ambient VDS VGS ID IDM EAS PD TJ,TSTG RθJC RθJA 500 +30 1 0.
3 4 1.
2 42 25 3.
3 3 0.
2 0.
026 0.
024 -55~150 5 110 37.
9 (Note 4) 140  Limited only By Maximum Junction Temperature UNITS V V A A mJ W W/ oC oC oC/W August 07,2014-REV.
01 Page 1 PPJN1NA50 / PJW1NA50 / PJU1NA50 / PJD1NA50 Electrical Characteristics o (TA=25 C unless otherwise noted) PARAMETER SYMBOL TEST CONDITION MIN.
TYP.
MAX.
UNITS Static Drain-Source Breakdown Voltage Gate Threshold Voltage Drain-Source On-State Resistance Zero Gate Voltage Drain Current Gate-Source Leakage Current Diode Forward Voltage Dynamic (Note 5) BVDSS VGS(th) RDS(on) IDSS IGSS VSD VGS=0V,ID=250uA VDS=VGS,ID=250uA VGS=10V,ID=0.
5A VDS=500V,VGS=0V VGS=+30V,VDS=0V IS=1A,VGS=0V 500 - - V 2 3.
02 4 - 7.
6 9 V Ω - 0.
02 1.
0 uA - +20 +100 nA - 0.
86 1.
4 V Total Gate Ch...


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