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PJD1NA80

Pan Jit International
Part Number PJD1NA80
Manufacturer Pan Jit International
Description 800V N-Channel MOSFET
Published Feb 27, 2016
Detailed Description PPJW1NA80 / PJU1NA80 / PJD1NA80 / PJP1NA80 800V N-Channel MOSFET Voltage 800 V Current 1A Features  RDS(ON), VGS@...
Datasheet PDF File PJD1NA80 PDF File

PJD1NA80
PJD1NA80

Overview
PPJW1NA80 / PJU1NA80 / PJD1NA80 / PJP1NA80 800V N-Channel MOSFET Voltage 800 V Current 1A Features  RDS(ON), VGS@10V,ID@0.
5A<16Ω  High switching speed  Improved dv/dt capability  Low Gate Charge  Low reverse transfer capacitance  Lead free in compliance with EU RoHS 2011/65/EU directive.
 Green molding compound as per IEC61249 Std.
(Halogen Free) TO-220AB SOT-223 TO-252 TO-251AB Mechanical Data  Case : TO-251AB ,TO-220AB, SOT-223, TO-252 Package  Terminals : Solderable per MIL-STD-750, Method 2026  TO-251AB Approx.
Weight : 0.
0104 ounces, 0.
297grams  TO-220AB Approx.
Weight : 0.
067 ounces, 1.
89 grams  SOT-223 Approx.
Weight : 0.
043 ounces, 0.
123grams  TO-252 Approx.
Weight : 0.
0104 ounces, 0.
297grams Maximum Ratings and Thermal Characteristics (TA=25oC unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Single Pulse Avalanche Energy (Note 1) Power Dissipation TC=25oC Derate abo...


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