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CHA3666

United Monolithic Semiconductors
Part Number CHA3666
Manufacturer United Monolithic Semiconductors
Description GaAs Monolithic Microwave
Published Mar 4, 2016
Detailed Description CHA3666 RoHS COMPLIANT 6-17GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The CHA3666 is a two-stage...
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CHA3666
CHA3666

Overview
CHA3666 RoHS COMPLIANT 6-17GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The CHA3666 is a two-stage self biased wide band monolithic low noise amplifier.
VD1 The circuit is manufactured with a standard pHEMT process: 0.
25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.
RFin VD2 RFout UMS P1 P2 N2 Main Features 24,0 ■ Broadband performance 6-17GHz ■ 1.
8dB noise figure ■ 26dBm 3rd order intercept point ■ 17dBm power at 1dB compression ■ 21dB gain 22,0 20,0 18,0 16,0 14,0 12,0 10,0 ■ Low DC power consumption 8,0 6,0 4,0 2,0 0,0 Main Characteristics 4,00 Temp = +25°C, Vd1=Vd2= +4V Pads: P1, N2=GND Gain 6,00 8,00 NF 10,00 12,00 14,00 16,00 18,00 Symbol Parameter NF Noise figure G Gain IP3 3rd order intercept point Min Typ Max Unit 1.
8 2 dB 19 21 dB 26 dBm ESD Protections: Electrostatic discharge sensitive device observe handling precautions! Ref.
: DSCHA3666-8108 - 17 Apr 08 1/8 Specifications subject to change without notice United Monolithic Semiconductors S.
A.
S.
Route Départementale 128 - B.
P.
46 - 91401 Orsay Cedex France Tel.
: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA3666 6-17GHz Low Noise Amplifier Electrical Characteristics Temp = +25°C, Pads: P1, N2 = GND (1) Symbol Fop G ∆G NF IS11I IS22I IP3 P1dB Vd Id Parameter Operating frequency range Gain (2) Gain flatness Noise figure (2) Input return loss (2) Ouput return loss (2) 3rd order intercept point (2) Output power at 1dB gain comp.
(2) (3) Drain bias voltage Drain bias current Min 6 19 15 60 Typ 21 ±0.
5 1.
8 2.
5:1 2.
0:1 26 17 4 80 Max 17 2 2.
7:1 2.
2:1 100 Unit GHz dB dB dB dB dB dBm dBm V mA (1) The other pads are not connected (2) These values are representative of on-wafer measurements that are made without bonding wires at the RF ports.
(3) P1dB can be increased (+0.
5dBm) when P1 & P2 are connected and N2 nonconnected.
In this case Id is typically 85mA Absolute Maximum Ratings (1) Temp =...


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