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STGW60H65DRF

STMicroelectronics
Part Number STGW60H65DRF
Manufacturer STMicroelectronics
Description field stop trench gate IGBT
Published Mar 13, 2016
Detailed Description STGW60H65DRF 60 A, 650 V field stop trench gate IGBT with Ultrafast diode 3 2 1 TO-247 Figure 1. Internal schematic di...
Datasheet PDF File STGW60H65DRF PDF File

STGW60H65DRF
STGW60H65DRF

Overview
STGW60H65DRF 60 A, 650 V field stop trench gate IGBT with Ultrafast diode 3 2 1 TO-247 Figure 1.
Internal schematic diagram Datasheet - production data Applications  Photovoltaic inverters  Uninterruptible power supply  Welding  Power factor correction  High switching frequency converters Description This device is an IGBT developed using an advanced proprietary trench gate and field stop structure.
This IGBT is the result of a compromise between conduction and switching losses, maximizing the efficiency of high switching frequency converters.
Furthermore, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in easier paralleling operation...


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