DatasheetsPDF.com

BAV23S

KEC
Part Number BAV23S
Manufacturer KEC
Description SILICON EPITAXIAL PLANAR DIODE
Published Mar 21, 2016
Detailed Description SEMICONDUCTOR TECHNICAL DATA High Voltage Switching. FEATURES Low Leakage Current. Repetitive Peak Reverse Voltage : VRR...
Datasheet PDF File BAV23S PDF File

BAV23S
BAV23S

Overview
SEMICONDUCTOR TECHNICAL DATA High Voltage Switching.
FEATURES Low Leakage Current.
Repetitive Peak Reverse Voltage : VRRM 250V.
Low Capacitance : CT 2pF.
MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Maximum (Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Single diode loaded.
Forward Current Double diode loaded.
VRM VR IFM IF 250 200 625 225 125 Surge Current (Square wave) t=1 s t = 100 s t = 10ms 9 IFSM 3 1.
7 Power Dissipation PD 250* Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 Note : * Device mounted on a FR4 Printed-Circuit Board (PCB) UNIT V V mA mA A A A mW BAV23S SILICON EPITAXIAL PLANAR DIODE E L BL DIM MILLIMETERS A 2.
93+_ 0.
20 B 1.
30+0.
20/-0.
15 A G H D 23 C 1.
30 MAX D 0.
40+0.
15/-0.
05 E 2.
40+0.
30/-0.
20 1 G 1.
90 H 0.
95 J 0.
13+0.
10/-0.
05 K 0.
00 ~ 0.
10 Q PP L 0.
55 M 0.
20 MIN N 1.
00+0.
20/-0.
10 C N K J P7 Q 0.
1 MAX M 1.
CATHODE 1 2.
ANODE 2 3.
ANODE 1/ CATHODE 2 3 21 SOT-23 Marking J CType...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)