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KDV302E

KEC
Part Number KDV302E
Manufacturer KEC
Description Silicon Diode
Published Mar 25, 2016
Detailed Description SEMICONDUCTOR TECHNICAL DATA TV TUNING. FEATURES High Capacitance Ratio Low Series Resistance KDV302E VARIABLE CAPACITA...
Datasheet PDF File KDV302E PDF File

KDV302E
KDV302E

Overview
SEMICONDUCTOR TECHNICAL DATA TV TUNING.
FEATURES High Capacitance Ratio Low Series Resistance KDV302E VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE C 1 E CATHODE MARK B A GG MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Reverse Voltage Junction Temperature VR Tj Storage Temperature Range Tstg RATING 32 125 -55 125 UNIT V 2 D 1.
ANODE 2.
CATHODE F DIM A B C D E F G MILLIMETERS 1.
60 +_0.
10 1.
20 +_0.
10 0.
80 +_0.
10 0.
30+_ 0.
05 0.
60+_ 0.
10 0.
13+_ 0.
05 0.
20+_ 0.
10 ESC Marking Type Name V5 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION Reverse Current Capacitance Capacitance Ratio IR C1V C2V C25V C28V C1V/C28V C1V/C2V C25V/C28V VR=32V VR=1V, f=1MHz VR=2V, f=1MHz VR=25V, f=1MHz VR=28V, f=1MHz - Series Resistance rs VR=5V, f=470MHz Note : Available in matched group for capacitance to 2.
0%.
C(Max.
)-C(Min.
) 0.
02 C(Min.
) (VR=1~28V) 2014.
3.
31 Revision No : 1 MIN.
- 56.
0 - 2.
45 21.
6 1.
25 1.
07 - TYP.
- 46.
0 2.
85 22.
4 1.
08 - MAX.
10 62.
0 2.
80 1.
15 UNIT nA pF pF pF pF - 1/2 TOTAL CAPACITANCE CT (pF) KDV302E CT - VR 100 Ta=25 C f=1MHz 10 1 0 5 10 15 20 25 30 REVERSE VOLTAGE VR (V) IR - VR 100 Ta=25 C 10 1 0 5 10 15 20 25 30 REVERSE VOLTAGE VR (V) SERIES RESISTANCE rS (Ω) rS - VR 1.
2 Ta=25 C f=470MHz 1.
0 0.
8 0.
6 0.
4 0.
2 0.
0 0 5 10 15 20 25 30 REVERSE VOLTAGE VR (V) REVERSE CURRENT IR (pA) 2014.
3.
31 Revision No : 1 2/2 ...


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