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KDV301E

KEC
Part Number KDV301E
Manufacturer KEC
Description Silicon Diode
Published Mar 25, 2016
Detailed Description SEMICONDUCTOR TECHNICAL DATA TV Tuning. FEATURES High Capacitance Ratio : C2V/C25V=14.5(Min.) Low Series Resistance : rs...
Datasheet PDF File KDV301E PDF File

KDV301E
KDV301E

Overview
SEMICONDUCTOR TECHNICAL DATA TV Tuning.
FEATURES High Capacitance Ratio : C2V/C25V=14.
5(Min.
) Low Series Resistance : rs=1.
1 (Max.
) Small Package : ESC.
MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Reverse Voltage Junction Temperature Storage Temperature Range SYMBOL VR Tj Tstg RATING 32 150 -55 150 UNIT V KDV301E VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE CATHODE MARK B A C 1 2 D 1.
ANODE 2.
CATHODE E F DIM A B C D E F MILLIMETERS 1.
60+_ 0.
10 1.
20+_ 0.
10 0.
80+_ 0.
10 0.
30+_ 0.
05 0.
60+_ 0.
10 0.
13+_ 0.
05 ESC Marking Type Name VQ ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION Reverse Current Capacitance Capacitance Ratio IR1 IR2 C2V C25V C2V/C25V VR=30V VR=30V, Ta=60 VR=2V, f=1MHz VR=25V, f=1MHz - Series Resistance rS VR=5V, f=470MHz Note : Available in matched group for capacitance to 2.
0%.
C(Max.
)-C(Min.
) C(Min.
) 0.
02 (VR=2~25V) MIN.
- 39.
5 2.
60 14.
5 - TYP.
- MAX.
10 100 47.
4 3.
03 1.
1 UNIT nA pF 2005.
6.
1 Revision N...


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