DatasheetsPDF.com

K4174

Panasonic
Part Number K4174
Manufacturer Panasonic
Description Silicon N-channel enhancement MOS FET
Published Mar 27, 2016
Detailed Description Plehtatsp:e/M/vaiiwsniwttefw.nolsalenocmwiie/cnpolDgdiina.ssUncpceRoaodLnnnttiapidalinmsnbasuaouiocneneniuoetdtdcnd.ielt...
Datasheet PDF File K4174 PDF File

K4174
K4174

Overview
Plehtatsp:e/M/vaiiwsniwttefw.
nolsalenocmwiie/cnpolDgdiina.
ssUncpceRoaodLnnnttiapidalinmsnbasuaouiocneneniuoetdtdcnd.
ieltticnnaytnmocalp.
eujaniuesepctn/ddtieeetentsnfyn/yfopaproelnelmdcoaetwitioynnpg.
efourDisMcaionnttieProductnnulifecycleaenstage.
dce/ Power MOS FETs This product complies with the RoHS Directive (EU 2002/95/EC).
2SK4174 Silicon N-channel enhancement MOS FET For high speed switching circuits  Features  Gate-source surrender voltage VGSS : ±25 V guaranteed  Avalanche energy capability guaranteed: EAS > 216 mJ  High-speed switching: tf = 90 ns (typ.
)  Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Drain-source surrender voltage Gate-source surrender voltage Drain current Peak drain current * Avalanche energy capability VDSS VGSS ID IDP EAS 110 ±25 ±28 ±130 216 V V A A mJ Avalanche energy capability * EAR 69 mJ 40 W Drain power dissipation Ta = 25°C PD 2.
0 W Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Note) *: Assurance of repetitive pulse.
(Repetitive period ≤ 5 ms on-duty ≤ 20%) But, it must stay within 40% of all that the time impressed pulse repetitively.
 Package  Code TO-220D-A1  Pin Name 1: Gate 2: Drain 3: Source  Marking Symbol: K4174  Internal Connection D G S T ≤ 5.
0 µs, On-duty ≤ 20%  Electrical Characteristics TC = 25°C±3°C Parameter Symbol Conditions Drain-source surrender voltage Drain-source cutoff current Gate-source cutoff current VDSS IDSS IGSS ID = 1 mA, VGS = 0 VDS = 88 V, VGS = 0 VGS = ±25 V, VDS = 0 Gate threshold voltage Vth VDS = 10 V, ID = 1.
0 mA Drain-source ON resistance Forward transfer conductance Short-circuit input capacitance (Common source) Short-circuit output capacitance (Common source) Reverse transfer capacitance (Common source) Turn-on delay time Rise time Turn-off delay time Fall time RDS(on) Yfs Ciss Coss Crss td(on) tr td(off) tf VGS = 10 V, ID = 14.
0 A VDS = 10 V, ID = 14.
0 A VDS = 10 V, VGS = 0, f = 1 MHz VDD = 30 ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)