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2N6056


Part Number 2N6056
Manufacturer Central Semiconductor
Title COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS
Description 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 ...
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2N6050 : 2N6050 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar PNP Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.10 (0.043) 29.9 (1.177) 30.4 (1.197) 22.23 (0.875) max. 16.64 (0.655) 17.15 (0.675) 1 2 Bipolar PNP Device. VCEO = 60V 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) IC = 12A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications. TO3 (TO204AA) www.DataSheet.net/ PINOUTS 1 – Base 2 – Emitter Case - Collector Parameter VCEO* IC(CON.

2N6050 : PNP 2N6050 – 2N6051 – 2N6052 POWER COMPLEMENTARY SILICON TRANSISTORS The 2N6050, 2N6051 and 2N6052 are silicon epitaxial-base transistors in monolithic Darlington configuration mounted in Jedec TO-3 metal case. They are inteded for use in power linear and low frequency switching applications. The complementary NPN types are 2N6057, 2N6058 and 2N6059 respectively. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol VCBO Collector-Base Voltage Ratings IE=0 www.DataSheet.net/ Value 2N6050 2N6051 2N6052 2N6050 2N6051 2N6052 2N6050 2N6051 2N6052 -60 -80 -100 -60 -80 -100 -60 -80 -100 -5.0 -12 -20 -200 150 200 -65 to +200 Unit V VCEO Collector-EmitterVoltage IB=0 V VCEX VEBO IC ICM IB PT .

2N6050 : The CENTRAL SEMICONDUCTOR 2N6050, 2N6057 series types are complementary silicon Darlington power transistors, manufactured by the epitaxial base process, designed for high gain amplifier and switching applications. MARKING: FULL PART NUMBER TO-3 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC ICM IB PD TJ, Tstg JC 2N6050 2N6057 60 60 2N6051 2N6058 80 80 5.0 12 20 0.2 150 -65 to +200 1.17 2N6052 2N6059 100 100 ELECTRICAL CHARACTERISTICS: (TC=25°C unless.

2N6050 : ·Built-in Base-Emitter Shunt Resistors ·High DC current gain ·Complement to type 2N6057 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low frequency switching applications. ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -12 A ICM Collector Current-Peak -20 A IB Base Current -0.2 A PC Collector Power Dissipation@TC=25℃ 150 W TJ Junction Temperature Tstg Storage Temperature 150 -65~150 ℃ ℃ THERMAL CHARACTERI.

2N6050 : .

2N6051 : TECHNICAL DATA PNP DARLINGTON POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/501 Devices 2N6051 2N6052 Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation(1) Symbol VCEO VCBO VEBO IB IC PT Top, Tstg Symbol RθJC 2N6051 80 80 2N6052 100 100 Unit Vdc Vdc Vdc Adc Adc W W 0 www.DataSheet4U.com @ TC = +250C @ TC = +1000C Operating & Storage Junction Temperature Range 5.0 0.2 12 150 75 -55 to +175 Max. 1.0 C THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case Unit 0 C/W TO-3* (TO-204AA) *See appendix A for package outline 1) Der.

2N6051 : PNP 2N6050 – 2N6051 – 2N6052 POWER COMPLEMENTARY SILICON TRANSISTORS The 2N6050, 2N6051 and 2N6052 are silicon epitaxial-base transistors in monolithic Darlington configuration mounted in Jedec TO-3 metal case. They are inteded for use in power linear and low frequency switching applications. The complementary NPN types are 2N6057, 2N6058 and 2N6059 respectively. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol VCBO Collector-Base Voltage Ratings IE=0 www.DataSheet.net/ Value 2N6050 2N6051 2N6052 2N6050 2N6051 2N6052 2N6050 2N6051 2N6052 -60 -80 -100 -60 -80 -100 -60 -80 -100 -5.0 -12 -20 -200 150 200 -65 to +200 Unit V VCEO Collector-EmitterVoltage IB=0 V VCEX VEBO IC ICM IB PT .

2N6051 : The CENTRAL SEMICONDUCTOR 2N6050, 2N6057 series types are complementary silicon Darlington power transistors, manufactured by the epitaxial base process, designed for high gain amplifier and switching applications. MARKING: FULL PART NUMBER TO-3 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC ICM IB PD TJ, Tstg JC 2N6050 2N6057 60 60 2N6051 2N6058 80 80 5.0 12 20 0.2 150 -65 to +200 1.17 2N6052 2N6059 100 100 ELECTRICAL CHARACTERISTICS: (TC=25°C unless.

2N6051 : ·Built-in Base-Emitter Shunt Resistors ·High DC current gain- hFE = 750 (Min) @ IC = -6A ·Collector-Emitter Sustaining Voltage- VCEO(SUS)= -80V(Min) ·Complement to type 2N6058 APPLICATIONS ·Designed for general purpose amplifier and low frequency switching applications. ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -12 A ICM Collector Current-Peak -20 A IB Base Current -0.2 A PC Collector Power Dissipation@TC=25℃ 150 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PAR.

2N6052 : 2N6052 Preferred Device Darlington Complementary Silicon Power Transistors This package is designed for general−purpose amplifier and low frequency switching applications. Features • High DC Current Gain — hFE = 3500 (Typ) @ IC = 5.0 Adc • Collector−Emitter Sustaining Voltage — @ 100 mA VCEO(sus) = 100 Vdc (Min) • Monolithic Construction with Built−In Base−Emitter Shunt Resistors • This is a Pb−Free Device* MAXIMUM RATINGS (Note 1) Rating Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Current − Continuous Peak Base Current Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Temperature Range Symbol VCEO VCB VEB IC IB PD TJ, Tstg .

2N6052 : www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N6052/D Darlington Complementary Silicon Power Transistors designed for general–purpose amplifier and low frequency switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 5.0 Adc • Collector–Emitter Sustaining Voltage — @ 100 mA VCEO(sus) = 80 Vdc (Min) — 2N6058 VCEO(sus) = 100 Vdc (Min) — 2N6052, 2N6059 • Monolithic Construction with Built–In Base–Emitter Shunt Resistors MAXIMUM RATINGS (1) Rating 2N6052 * NPN PNP 2N6058 2N6059 * *Motorola Preferred Device ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ .

2N6052 : TECHNICAL DATA PNP DARLINGTON POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/501 Devices 2N6051 2N6052 Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation(1) Symbol VCEO VCBO VEBO IB IC PT Top, Tstg Symbol RθJC 2N6051 80 80 2N6052 100 100 Unit Vdc Vdc Vdc Adc Adc W W 0 www.DataSheet4U.com @ TC = +250C @ TC = +1000C Operating & Storage Junction Temperature Range 5.0 0.2 12 150 75 -55 to +175 Max. 1.0 C THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case Unit 0 C/W TO-3* (TO-204AA) *See appendix A for package outline 1) Der.

2N6052 : PNP 2N6050 – 2N6051 – 2N6052 POWER COMPLEMENTARY SILICON TRANSISTORS The 2N6050, 2N6051 and 2N6052 are silicon epitaxial-base transistors in monolithic Darlington configuration mounted in Jedec TO-3 metal case. They are inteded for use in power linear and low frequency switching applications. The complementary NPN types are 2N6057, 2N6058 and 2N6059 respectively. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol VCBO Collector-Base Voltage Ratings IE=0 www.DataSheet.net/ Value 2N6050 2N6051 2N6052 2N6050 2N6051 2N6052 2N6050 2N6051 2N6052 -60 -80 -100 -60 -80 -100 -60 -80 -100 -5.0 -12 -20 -200 150 200 -65 to +200 Unit V VCEO Collector-EmitterVoltage IB=0 V VCEX VEBO IC ICM IB PT .

2N6052 : The 2N6052 is a silicon PNP Darlington transistor in a TO−3 type case designed for general−purpose amplifier and low−frequency switching applications. Features: D High DC Current Gain: hFE = 3500 Typ @ IC = 5A D Collector−Emitter Sustaining Voltage: VCEO(sus) = 100V Min @ 100mA D Monolithic Construction with Built−In Base−Emitter Shunt Resistors Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO . . 100V Collector−Base Voltage, VCB . . 100V Emitter−Base Voltage, VEB . ..

2N6052 : The CENTRAL SEMICONDUCTOR 2N6050, 2N6057 series types are complementary silicon Darlington power transistors, manufactured by the epitaxial base process, designed for high gain amplifier and switching applications. MARKING: FULL PART NUMBER TO-3 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC ICM IB PD TJ, Tstg JC 2N6050 2N6057 60 60 2N6051 2N6058 80 80 5.0 12 20 0.2 150 -65 to +200 1.17 2N6052 2N6059 100 100 ELECTRICAL CHARACTERISTICS: (TC=25°C unless.

2N6052 : ·Built-in Base-Emitter Shunt Resistors ·High DC current gain- hFE = 750 (Min) @ IC = -6A ·Collector-Emitter Sustaining Voltage- VCEO(SUS)= -100V(Min) ·Complement to type 2N6059 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low frequency switching applications. ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO IC ICM Emitter-Base Voltage Collector Current -Continuous Collector Current-Peak -5 V -12 A -20 A IB Base Current -0.2 A PC Collector Power Dissipation@TC=25℃ 150 W TJ Junction.

2N6053 : 2N6053-2N6054 – PNP 2N6055-2N6056 – NPN High-reliability discrete products and engineering services since 1977 COMPLEMENTARY SILICON POWER TRANSISTORS FEATURES: • Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number • Available Non-RoHS (standard) or RoHS compliant (add PBF suffix) MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current -Continuous Peak Base Current Total Power Dissipation Derate above 25°C Operating and Storage Temperature Range Thermal Resistance Junction to Case Symbol VCEO VCBO VEBO IC IB PD TJ, TSTG RθJC 2N6053 2N6055 2N6054 2N6056 60 80 60 80 .




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