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IRF7910PBF-1

International Rectifier
Part Number IRF7910PBF-1
Manufacturer International Rectifier
Description Power MOSFET
Published Mar 28, 2016
Detailed Description IRF7910PbF-1 VDS RDS(on) max (@VGS = 4.5V) Qg (typical) ID (@TA = 25°C) 12 V 15 mΩ 17 nC 10 A HEXFET® Power MOSFET S...
Datasheet PDF File IRF7910PBF-1 PDF File

IRF7910PBF-1
IRF7910PBF-1

Overview
IRF7910PbF-1 VDS RDS(on) max (@VGS = 4.
5V) Qg (typical) ID (@TA = 25°C) 12 V 15 mΩ 17 nC 10 A HEXFET® Power MOSFET S1 1 G1 2 S2 3 G2 4 8 D1 7 D1 6 D2 5 D2 Top View SO-8 Applications l High Frequency 3.
3V and 5V input Point of-Load Synchronous Buck Converters for Netcom and Computing Applications l Power Management for Netcom, Computing and Portable Applications Features Industry-standard pinout SO-8 Package Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1, Industrial qualification Benefits ⇒ Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Base Part Number Package Type IRF7910PbF-1 SO-8 Standard Pack Form Quantity Tube/Bulk 95 Tape and Reel 4000 Orderable Part Number IRF7910PbF-1 IRF7910TRPbF-1 Absolute Maximum Ratings Symbol VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C TJ , TSTG Parameter Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 4.
5V Continuous Drain Current, VGS @ 4.
5V Pulsed Drain Current Maximum Power Dissipation„ Maximum Power Dissipation„ Linear Derating Factor Junction and Storage Temperature Range Thermal Resistance Symbol Parameter RθJL RθJA Junction-to-Drain Lead Junction-to-Ambient „ Max.
12 ± 12 10 7.
9 79 2.
0 1.
3 16 -55 to + 150 Units V V A W W mW/°C °C Typ.
––– ––– Max.
42 62.
5 Units °C/W Notes  through „ are on page 8 1 www.
irf.
com © 2013 International Rectifier Submit Datasheet Feedback November 22, 2013 IRF7910PbF-1 Static @ TJ = 25°C (unless otherwise specified) Symbol V(BR)DSS ΔV(BR)DSS/ΔTJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp.
Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) IDSS Gate Threshold Voltage Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min.
12 ––– ––– ––– 0.
6 ––– ––– ––– ––– Typ.
––– 0.
01 11.
5 20 ––– ––– ––– ––– ––– Max.
––– ––– 15 50 2.
0 100 250 2...


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