DatasheetsPDF.com

IRF7910PBF

International Rectifier
Part Number IRF7910PBF
Manufacturer International Rectifier
Description Power MOSFET
Published Mar 28, 2016
Detailed Description PD - 95336A IRF7910PbF Applications l High Frequency 3.3V and 5V input Pointof-Load Synchronous Buck Converters for Net...
Datasheet PDF File IRF7910PBF PDF File

IRF7910PBF
IRF7910PBF


Overview
PD - 95336A IRF7910PbF Applications l High Frequency 3.
3V and 5V input Pointof-Load Synchronous Buck Converters for Netcom and Computing Applications l Power Management for Netcom, Computing and Portable Applications l Lead-Free Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) l Fully Characterized Avalanche Voltage and Current VDSS 12V HEXFET® Power MOSFET RDS(on) max 15mΩ @VGS = 4.
5V ID 10A S1 1 G1 2 S2 3 G2 4 8 D1 7 D1 6 D2 5 D2 Top View SO-8 Absolute Maximum Ratings Symbol VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C TJ , TSTG Parameter Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 4.
5V Continuous Drain Current, VGS @ 4.
5V Pulsed Drain Current Maximum Power Dissipation„ Maximum Power Dissipation„ Linear Derating Factor Junction and Storage Temperature Range Max.
12 ± 12 10 7.
9 79 2.
0 1.
3 16 -55 to + 150 Units V V A W W mW/°C °C Thermal Resistance Symbol Parameter RθJL RθJA Junction-to-Drain Lead Junction-to-Ambient „ Notes  through „ are on page 8 www.
irf.
com Typ.
––– ––– Max.
42 62.
5 Units °C/W 1 07/21/08 IRF7910PbF Static @ TJ = 25°C (unless otherwise specified) Symbol V(BR)DSS ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp.
Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) IDSS Gate Threshold Voltage Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min.
12 ––– ––– ––– 0.
6 ––– ––– ––– ––– Typ.
––– 0.
01 11.
5 20 ––– ––– ––– ––– ––– Max.
––– ––– 15 50 2.
0 100 250 200 -200 Units V V/°C mΩ V µA nA Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA VGS = 4.
5V, ID = 8.
0A ƒ VGS = 2.
8V, ID = 5.
0A VDS = VGS, ID = 250µA VDS = 9.
6V, VGS = 0V VDS = 9.
6V, VGS = 0V, TJ = 125°C VGS = 12V VGS = -12V Dynamic @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min.
Typ.
Max.
Units Conditions gfs Qg Qgs Qgd Qoss td(on) tr td(off) tf Ciss Coss Crss Forward Trans...



Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)