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KDS112E

KEC
Part Number KDS112E
Manufacturer KEC
Description SILICON EPITAXIAL TYPE DIODE
Published Apr 3, 2016
Detailed Description SEMICONDUCTOR TECHNICAL DATA VHF TUNER BAND SWITCH APPLICATIONS. FEATURES Small Package. Small Total Capacitance : CT=1....
Datasheet PDF File KDS112E PDF File

KDS112E
KDS112E

Overview
SEMICONDUCTOR TECHNICAL DATA VHF TUNER BAND SWITCH APPLICATIONS.
FEATURES Small Package.
Small Total Capacitance : CT=1.
2pF(Max.
).
Low Series Resistance : rS=0.
6 (Typ.
).
MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Reverse Voltage Forward Current Junction Temperature VR IF Tj Storage Temperature Range Tstg RATING 30 50 125 -55 125 UNIT V mA C A G H KDS112E SILICON EPITAXIAL TYPE DIODE E B 2 13 FF 1.
ANODE 1 2.
ANODE 2 3.
CATHODE D DIM MILLIMETERS A 1.
60+_ 0.
20 B 0.
85+_ 0.
10 C 0.
70+_ 0.
10 D 0.
27+_ 0.
10 E 1.
60+_ 0.
10 F 0.
39+_ 0.
10 G 1.
00+_ 0.
10 JH 0.
50 J 0.
13+_ 0.
05 3 21 ESM Marking BF ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Forward Voltage VF Reverse Current IR Reverse Voltage VR Total Capacitance CT Series Resistance rs TEST CONDITION IF=2mA VR=15V IR=1 A VR=6V, f=1MHz IF=2mA, f=100MHz MIN.
30 - TYP.
0.
8 0.
6 MAX.
0.
85 0.
1 1.
2 0.
9 UNIT V A V pF 2014.
3.
31 Revision No : 2 1/2 SERIES RESISTANCE rs (Ω) KDS112E rs - IF 3 Ta=25 C f=100MHz 1 0.
5 0.
3 1 35 10 FORWARD CURRENT IF (mA) 20 TOTAL CAPACITANCE CT (pF) C T - VR 3 Ta=25 C f=1MHz 1 0.
5 0.
3 1 35 10 REVERSE VOLTAGE VR (V) 20 IF - VF -1 10 Ta=25 C -2 10 -3 10 -4 10 0 0.
4 0.
8 1.
2 1.
6 2.
0 FORWARD VOLTAGE VF (V) 2.
4 FORWARD CURRENT I F (A) 2014.
3.
31 Revision No : 2 2/2 ...


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