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KDS114E

KEC
Part Number KDS114E
Manufacturer KEC
Description SILICON EPITAXIAL PLANAR DIODE
Published Apr 3, 2016
Detailed Description SEMICONDUCTOR TECHNICAL DATA VHF TUNER BAND SWITCH APPLICATIONS. FEATURES Small Package. Small Total Capacitance : CT=1....
Datasheet PDF File KDS114E PDF File

KDS114E
KDS114E

Overview
SEMICONDUCTOR TECHNICAL DATA VHF TUNER BAND SWITCH APPLICATIONS.
FEATURES Small Package.
Small Total Capacitance : CT=1.
2pF(Max.
).
Low Series Resistance : rS=0.
5 (Typ.
).
MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Reverse Voltage Forward Current Junction Temperature VR IF Tj Storage Temperature Range Tstg RATING 35 100 150 -55 150 UNIT V mA KDS114E SILICON EPITAXIAL PLANAR DIODE CATHODE MARK B A GG C 1 2 D 1.
ANODE 2.
CATHODE E F DIM A B C D E F G MILLIMETERS 1.
60 +_0.
10 1.
20 +_0.
10 0.
80 +_0.
10 0.
30+_ 0.
05 0.
60+_ 0.
10 0.
13+_ 0.
05 0.
20+_ 0.
10 ESC Marking Type Name UD ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Forward Voltage Reverse Current Reverse Voltage Total Capacitance VF IR VR CT Series Resistance rs TEST CONDITION IF=2mA VR=15V IR=1 A VR=6V, f=1MHz IF=2mA, f=100MHz MIN.
35 - TYP.
0.
7 0.
5 MAX.
0.
85 0.
1 1.
2 0.
9 UNIT V A V pF 2014.
3.
31 Revision No : 2 1/2 SERIES RESISTANCE rS (Ω) KDS114E rS - IF 3 Ta=25 C f=100MHz 1 0.
5 0.
3 0.
1 1 3 10 30 FORWARD CURRENT IF (mA) 100 TOTAL CAPACITANCE CT (pF) CT - VR 10 Ta=25 C f=100MHz 5 3 1 0.
5 0.
3 1 3 5 10 30 50 100 REVERSE VOLTAGE VR (V) I F - VF 10 -1 Ta=25 C 10 -2 10 -3 10 -4 0 0.
4 0.
8 1.
2 1.
6 2.
0 2.
4 2.
8 FORWARD VOLTAGE V F (V) FORWARD CURRENT I F (A) 2014.
3.
31 Revision No : 2 2/2 ...


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