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RU40120M

Ruichips
Part Number RU40120M
Manufacturer Ruichips
Description N-Channel Advanced Power MOSFET
Published Apr 4, 2016
Detailed Description RU40120M N-Channel Advanced Power MOSFET Features • 40V/120A, RDS (ON) =2.7mΩ(Typ.)@VGS=10V • Super High Dense Cell Des...
Datasheet PDF File RU40120M PDF File

RU40120M
RU40120M

Overview
RU40120M N-Channel Advanced Power MOSFET Features • 40V/120A, RDS (ON) =2.
7mΩ(Typ.
)@VGS=10V • Super High Dense Cell Design • Ultra Low On-Resistance • Fast Switching Speed • 100% avalanche tested • Lead Free and Green Devices Available (RoHS Compliant) Applications • DC/DC Converters • Power Supply Pin Description D D DD SSS G PIN1 PDFN5060 D PIN1 G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink ① IDP 300μs Pulse Drain Current Tested Continuous Drain Current@TC(VGS=10V) ID② Continuous Drain Current@TA(VGS=10V)③ Maximum Power Dissipation@TC PD ③ Maximum Power Dissipation@TA S N-Channel MOSFET Rating Unit TC=25°C 40 ±20 150 -55 to 150 50 V °C °C A TC=25°C 480 A TC=25°C 120 TC=100°C 75 A TA=25°C 21 TA=70°C 17 TC=25°C 96 TC=100°C 38 W TA=25°C 4.
2 TA=70°C 2.
7 Ruichips Semiconductor Co.
, Ltd Rev.
A– NOV.
, 2013 1 www.
ruichips.
com RU40120M Symbol Parameter Rating Unit RθJC Thermal Resistance-Junction to Case ③ RθJA Thermal Resistance-Junction to Ambient Drain-Source Avalanche Ratings 1.
3 30 EAS④ Avalanche Energy, Single Pulsed Electrical Characteristics (TC=25°C Unless Otherwise Noted) 400 Symbol Parameter Test Condition RU40120M Min.
Typ.
Max.
Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA VDS=40V, VGS=0V IDSS Zero Gate Voltage Drain Current TJ=125°C VGS(th) Gate Threshold Voltage VDS=VGS, IDS=250µA IGSS Gate Leakage Current VGS=±20V, VDS=0V RDS(ON)⑤ Drain-Source On-state Resistance VGS=10V, IDS=60A Diode Characteristics 40 1 30 24 ±100 2.
7 4.
5 ⑤ VSD trr Qrr Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge ISD=60A, VGS=0V ISD=60A, dlSD/dt=100A/µs 1.
2 33 30 Dynamic Characteristics⑥ RG Ciss Coss Crss td(ON) tr td(OFF) Gate Resis...


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