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RU40120S

Ruichips
Part Number RU40120S
Manufacturer Ruichips
Description N-Channel Advanced Power MOSFET
Published Apr 4, 2016
Detailed Description RU40120S N-Channel Advanced Power MOSFET Features • 40V/120A, RDS (ON) =3.5mΩ(Typ.)@VGS=10V • Super High Dense Cell Des...
Datasheet PDF File RU40120S PDF File

RU40120S
RU40120S


Overview
RU40120S N-Channel Advanced Power MOSFET Features • 40V/120A, RDS (ON) =3.
5mΩ(Typ.
)@VGS=10V • Super High Dense Cell Design • Ultra Low On-Resistance • 100% avalanche tested • Lead Free and Green Devices Available (RoHS Compliant) Pin Description D Applications • DC-DC Converters G S TO263 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink ① IDP 300μs Pulse Drain Current Tested ② ID Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient Drain-Source Avalanche Ratings ③ EAS Avalanche Energy, Single Pulsed S N-Channel MOSFET Rating Unit TC=25°C 40 ±20 175 -55 to 175 120 V °C °C A TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C 480 A 120 A 103 150 W 75 1 °C/W 62.
5 °C/W 400 mJ Ruichips Semiconductor Co.
, Ltd Rev.
A– JUL.
, 2013 1 www.
ruichips.
com RU40120S Electrical Characteristics (TC=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU40120S Min.
Typ.
Max.
Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA VDS=40V, VGS=0V IDSS Zero Gate Voltage Drain Current TJ=125°C VGS(th) Gate Threshold Voltage VDS=VGS, IDS=250µA IGSS Gate Leakage Current VGS=±20V, VDS=0V RDS(ON)④ Drain-Source On-state Resistance VGS=10V, IDS=60A Diode Characteristics 40 1 30 24 ±100 3.
5 4.
5 ④ VSD trr Qrr Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge ISD=60A, VGS=0V ISD=60A, dlSD/dt=100A/µs 1.
2 33 30 Dynamic Characteristics⑤ RG Ciss Coss Crss td(ON) tr td(OFF) Gate Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS=20V, Frequency=1.
0MHz VDD=20V, IDS=60A, VGEN=10V,RG...


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