DatasheetsPDF.com

2SK3212

Renesas
Part Number 2SK3212
Manufacturer Renesas
Description Silicon N Channel MOS FET
Published Apr 8, 2016
Detailed Description 2SK3212 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS =0.1 Ω typ. • High speed s...
Datasheet PDF File 2SK3212 PDF File

2SK3212
2SK3212

Overview
2SK3212 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS =0.
1 Ω typ.
• High speed switching • 4 V gate drive device can be driven from 5 V source Outline REJ03G1092-0300 (Previous: ADE-208-752A) Rev.
3.
00 Sep 07, 2005 RENESAS Package code: PRSS0003AD-A (Package name: TO-220FM) D G 1.
Gate 2.
Drain 3.
Source 12 3 S Rev.
3.
00 Sep 07, 2005 page 1 of 7 2SK3212 Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1.
PW ≤ 10µs, duty cycle ≤ 1 % 2.
Value at Tc = 25°C 3.
Value at Tch = 25°C, Rg ≥ 50Ω Symbol VDSS VGSS ID ID(pulse)Note1 IDR IAP Note3 EAR Note3 Pch Note2 Tch Tstg Ratings 100 ±20 10 40 10 10 10 20 150 –55 to +150 (Ta = 25°C) Unit V V A A A A mJ W °C °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V(BR)DSS 100 — — V ID = 10 mA, VGS = 0 Gate to source breakdown voltage V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 Zero gate voltage drain current IDSS — — 10 µA VDS = 100 V, VGS = 0 Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance VGS(off) 1.
0 — 2.
5 V ID = 1 mA, VDS = 10 V RDS(on) — 100 130 mΩ ID = 5 A, VGS = 10 VNote4 RDS(on) — 130 170 mΩ ID = 5 A, VGS = 4 V Note4 |yfs| 4.
5 7.
5 — S ID = 5 A, VDS = 10 V Note4 Input capacitance Ciss — 420 — pF VDS = 10 V, VGS = 0, Output capacitance Coss — 185 — pF f = 1 MHz Reverse transfer capacitance Crss — 100 — pF Turn-on delay time td(on) — 12 — Rise time tr — 60 — Turn-off delay time td(off) — 105 — Fall time tf — 70 — Body–drain diode forward voltage VDF — 0.
9 — Body–drain diode reverse recovery time trr — 90 — Note: 4.
Pulse test ns ID = 5 A, VGS...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)