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SSD2504S

SeCoS
Part Number SSD2504S
Manufacturer SeCoS
Description N-Channel MOSFET
Published Apr 10, 2016
Detailed Description Elektronische Bauelemente SSD2504S 5.4A , 100V , RDS(ON) 370mΩ N-Ch Enhancement Mode Power MOSFET RoHS Compliant Produ...
Datasheet PDF File SSD2504S PDF File

SSD2504S
SSD2504S

Overview
Elektronische Bauelemente SSD2504S 5.
4A , 100V , RDS(ON) 370mΩ N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION The SSD2504S is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(on) and gate charge for most of the synchronous buck converter applications .
TO-252(D-Pack) FEATURES  Advanced high cell density Trench technology  Super Low Gate Charge  Excellent CdV/dt effect decline  100% EAS Guaranteed  Green Device Available MARKING 2504S  Date Code PACKAGE INFORMATION Package MPQ TO-252 2.
5K Leader Size 13 inch A BC D  Gate  Drain  Source GE K HF MJ N O P REF.
Millimeter Min.
Max.
REF.
Millimeter Min.
Max.
A 6.
35 6.
80 J 2.
30 REF.
B 5.
20 5.
50 K 0.
64 0.
90 C 2.
15 2.
40 M 0.
50 1.
1 D 0.
45 0.
58 N 0.
9 1.
65 E 6.
8 7.
5 O 0 0.
15 F 2.
40 3.
0 P 0.
43 0.
58 G 5.
40 6.
25 H 0.
64 1.
20 ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Rating Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ±20 Continuous Drain Current @VGS=10V 1 Pulsed Drain Current 2 TC=25°C TC=100°C ID IDM 5.
4 3.
4 11 Total Power Dissipation 3 TC=25°C TA=25°C PD 20.
8 1.
13 Operating Junction and Storage Temperature Range TJ, TSTG -55~150 Thermal Resistance Rating Maximum Thermal Resistance Junction-Ambient 1 Maximum Thermal Resistance Junction-Case 1 RθJA RθJC 110 6 Unit V V A A A W °C °C / W °C / W http://www.
SeCoSGmbH.
com/ 08-May-2014 Rev.
B Any changes of specification will not be informed individually.
Page 1 of 4 Elektronische Bauelemente SSD2504S 5.
4A , 100V , RDS(ON) 370mΩ N-Ch Enhancement Mode Power MOSFET ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise specified) Parameter Symbol Min.
Typ.
Max.
Unit Teat Conditions Static Drain-Source Breakdown Voltage BVDSS 100 - - V VGS=0, ID= 250μA Gate-Threshold Voltage VGS(th) 1 - 2.
5 V VDS=VGS, ID=250μA Forward Transconductance gfs - ...


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