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SSD2504

SeCoS
Part Number SSD2504
Manufacturer SeCoS
Description N-Channel MOSFET
Published Jul 7, 2013
Detailed Description SSD2504 Elektronische Bauelemente N-Ch Enhancement Mode Power MOSFET 5.0A, 100V, RDS(ON) 0.22Ω RoHS Compliant Product A ...
Datasheet PDF File SSD2504 PDF File

SSD2504
SSD2504

Overview
SSD2504 Elektronische Bauelemente N-Ch Enhancement Mode Power MOSFET 5.
0A, 100V, RDS(ON) 0.
22Ω RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION The SSD2504 provide the designer with the best combination of fast switching.
The TO-252 package is universally preferred for all commercial-industrial surface mount applications.
The device is suited for charger, industrial and consumer environment.
TO-252(D-Pack) FEATURES       Low On-resistance Fast Switching Speed Low-voltage drive (4V) Wide SOA (safe operating area) Easily designed drive circuits Easy to parallel A B C D GE K HF MARKING Drain REF.
M J N O P Gate Source http://www.
DataSheet4U.
net/ A B C D E F G H Millimeter Min.
Max.
6.
4 6.
8 5.
20 5.
50 2.
20 2.
40 0.
45 0.
58 6.
8 7.
3 2.
40 3.
0 5.
40 6.
2 0.
8 1.
20 REF.
J K M N O P Millimeter Min.
Max.
2.
30 REF.
0.
70 0.
90 0.
50 1.
1 0.
9 1.
6 0 0.
15 0.
43 0.
58 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 1 SYMBOL VDS VGS ID @TC=25℃ ID @TC=100℃ IDM PD @TC=25℃ TJ, TSTG RθJA RθJC RATINGS 100 ±20 5.
0 3.
75 20 20 0.
16 -55 ~ 150 110 6.
25 UNIT V V A A A W W / °C °C °C / W °C / W Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Thermal Resistance Junction-Ambienta Maximum Thermal Resistance Junction-Case THERMAL DATA http://www.
SeCoSGmbH.
com/ Any changes of specification will not be informed individually.
11-May-2010 Rev.
A Page 1 of 4 datasheet pdf - http://www.
DataSheet4U.
net/ SSD2504 Elektronische Bauelemente N-Ch Enhancement Mode Power MOSFET 5.
0A, 100V, RDS(ON) 0.
22Ω ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) PARAMETER Dran-Source Breakdown Voltage Gate-Threshold Voltage Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current Static Drain-Source On-Resistance 2 Turn-on Delay Time 2 Rise Time Turn-off Delay Time ...


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