DatasheetsPDF.com

2N6044


Part Number 2N6044
Manufacturer Central Semiconductor
Title COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
Description The CENTRAL SEMICONDUCTOR 2N6040 and 2N6043 Series types are Complementary Silicon Power Transistors, manufactured by the epitaxial base process,...
Features VBE(OFF)=1.5V VCE=Rated VCEO, VBE(OFF)=1.5V, TC=150°C VCE=Rated VCEO VEB=5.0V IC=100mA (2N6040, 2N6043) IC=100mA (2N6041, 2N6044) IC=100mA (2N6042, 2N6045) IC=4.0A, IB=16mA (2N6040, 2N6041, 2N6043, 2N6044) IC=3.0A, IB=12mA (2N6042, 2N6045) IC=8.0A, IB=80mA IC=8.0A, IB=80mA VCE=4.0V, IC=4.0A VCE=4.0...

File Size 125.54KB
Datasheet 2N6044 PDF File








Similar Ai Datasheet

2N6040 : PNP - 2N6040, 2N6042, NPN - 2N6043, 2N6045 Plastic Medium-Power Complementary Silicon Transistors Plastic medium−power complementary silicon transistors are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector−Emitter Sustaining Voltage − @ 100 mAdc − VCEO(sus) = 60 Vdc (Min) − 2N6040, 2N6043 = 100 Vdc (Min) − 2N6042, 2N6045 • Low Collector−Emitter Saturation Voltage − VCE(sat) = 2.0 Vdc (Max) @ IC = 4.0 Adc − 2N6043,44 = 2.0 Vdc (Max) @ IC = 3.0 Adc − 2N6042, 2N6045 • Monolithic Construction with Built−In Base−Emitter Shunt Resistors • Epoxy Meets UL 94 V−0 @ 0.125 in • ESD Ratings: Human .

2N6040 : www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N6040/D Plastic Medium-Power Complementary Silicon Transistors designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 100 mAdc — VCEO(sus) = 60 Vdc (Min) — 2N6040, 2N6043 VCEO(sus) = 80 Vdc (Min) — 2N6041, 2N6044 VCEO(sus) = 100 Vdc (Min) — 2N6042, 2N6045 • Low Collector–Emitter Saturation Voltage — VCE(sat) = 2.0 Vdc (Max) @ IC = 4.0 Adc — 2N6040,41, 2N6043,44 VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc — 2N6042, 2N6045 • Monolithic Construction with Built–In Base–Emitter Shunt Resisto.

2N6040 : The CENTRAL SEMICONDUCTOR 2N6040 and 2N6043 Series types are Complementary Silicon Power Transistors, manufactured by the epitaxial base process, designed for general purpose amplifier applications. MARKING: FULL PART NUMBER TO-220 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC ICM IB PD TJ, Tstg ΘJC 2N6040 2N6043 60 60 2N6041 2N6044 80 80 5.0 8.0 16 120 75 -65 to +150 1.67 2N6042 2N6045 100 100 ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL.

2N6040 : ·High DC Current Gain- : hFE = 1000(Min)@ IC= -4A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -60V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = -2.0V(Max)@ IC= -4A ·Complement to Type 2N6043 isc Product Specification 2N6040 APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage -60 VCEO Collector-Emitter Voltage -60 VEBO Emitter-Base Voltage -5 IC Collector Current-Continuous -8 ICM Collector Current-Peak -16 IB Base Current-DC PC Collector Power Dissipation TC=25℃ Tj Junction Temperature -120 75 150 Tstg Storage Temperatur.

2N6041 : MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N6040/D Plastic Medium-Power Complementary Silicon Transistors designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 100 mAdc — VCEO(sus) = 60 Vdc (Min) — 2N6040, 2N6043 VCEO(sus) = 80 Vdc (Min) — 2N6041, 2N6044 VCEO(sus) = 100 Vdc (Min) — 2N6042, 2N6045 • Low Collector–Emitter Saturation Voltage — VCE(sat) = 2.0 Vdc (Max) @ IC = 4.0 Adc — 2N6040,41, 2N6043,44 VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc — 2N6042, 2N6045 • Monolithic Construction with Built–In Base–Emitter Shunt Resistors MAXIMUM RATINGS (.

2N6041 : The CENTRAL SEMICONDUCTOR 2N6040 and 2N6043 Series types are Complementary Silicon Power Transistors, manufactured by the epitaxial base process, designed for general purpose amplifier applications. MARKING: FULL PART NUMBER TO-220 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC ICM IB PD TJ, Tstg ΘJC 2N6040 2N6043 60 60 2N6041 2N6044 80 80 5.0 8.0 16 120 75 -65 to +150 1.67 2N6042 2N6045 100 100 ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL.

2N6041 : ·High DC Current Gain- : hFE = 1000(Min)@ IC= -4A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -80V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = -2.0V(Max)@ IC= -4A ·Complement to Type 2N6044 isc Product Specification 2N6041 APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage -80 VCEO Collector-Emitter Voltage -80 VEBO Emitter-Base Voltage -5 IC Collector Current-Continuous -8 ICM Collector Current-Peak -16 IB Base Current-DC PC Collector Power Dissipation TC=25℃ Tj Junction Temperature -120 75 150 Tstg Storage Temperatur.

2N6042 : PNP - 2N6040, 2N6042, NPN - 2N6043, 2N6045 Plastic Medium-Power Complementary Silicon Transistors Plastic medium−power complementary silicon transistors are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector−Emitter Sustaining Voltage − @ 100 mAdc − VCEO(sus) = 60 Vdc (Min) − 2N6040, 2N6043 = 100 Vdc (Min) − 2N6042, 2N6045 • Low Collector−Emitter Saturation Voltage − VCE(sat) = 2.0 Vdc (Max) @ IC = 4.0 Adc − 2N6043,44 = 2.0 Vdc (Max) @ IC = 3.0 Adc − 2N6042, 2N6045 • Monolithic Construction with Built−In Base−Emitter Shunt Resistors • Epoxy Meets UL 94 V−0 @ 0.125 in • ESD Ratings: Human .

2N6042 : www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N6040/D Plastic Medium-Power Complementary Silicon Transistors designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 100 mAdc — VCEO(sus) = 60 Vdc (Min) — 2N6040, 2N6043 VCEO(sus) = 80 Vdc (Min) — 2N6041, 2N6044 VCEO(sus) = 100 Vdc (Min) — 2N6042, 2N6045 • Low Collector–Emitter Saturation Voltage — VCE(sat) = 2.0 Vdc (Max) @ IC = 4.0 Adc — 2N6040,41, 2N6043,44 VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc — 2N6042, 2N6045 • Monolithic Construction with Built–In Base–Emitter Shunt Resisto.

2N6042 : The CENTRAL SEMICONDUCTOR 2N6040 and 2N6043 Series types are Complementary Silicon Power Transistors, manufactured by the epitaxial base process, designed for general purpose amplifier applications. MARKING: FULL PART NUMBER TO-220 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC ICM IB PD TJ, Tstg ΘJC 2N6040 2N6043 60 60 2N6041 2N6044 80 80 5.0 8.0 16 120 75 -65 to +150 1.67 2N6042 2N6045 100 100 ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL.

2N6042 : ·High DC Current Gain- : hFE = 1000(Min)@ IC= -3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -100V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = -2.0V(Max)@ IC= -3A ·Complement to Type 2N6045 isc Product Specification 2N6042 APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage -100 VCEO Collector-Emitter Voltage -100 VEBO Emitter-Base Voltage -5 IC Collector Current-Continuous -8 ICM Collector Current-Peak -16 IB Base Current-DC PC Collector Power Dissipation TC=25℃ Tj Junction Temperature -120 75 150 Tstg Storage Tempera.

2N6042 : Bipolar Transistor Features: •  High DC Current Gain •  Collector-Emitter Sustaining Voltage: V = 100V Min •  Monolithic Construction with Built-in Base-Emitter Shunt Resistors Absolute Maximum Ratings: Parameters Collector Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Collector Peak Current Base Current Total Power Dissipation upto TC = 25°C Derate above 25°C Total Power Dissipation upto T = 25°C Derate above 25°C Operating Junction Temperature Range Storage Temperature Range Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol Vceo Vcbo Vebo Ic Icm Ib Ptot Tj Tstg Rth (j-c) Rth (j-a) Unit 100V 5V 8A 16A 120mA 75W 0.6W/°C 2..

2N6043 : PNP - 2N6040, 2N6042, NPN - 2N6043, 2N6045 Plastic Medium-Power Complementary Silicon Transistors Plastic medium−power complementary silicon transistors are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector−Emitter Sustaining Voltage − @ 100 mAdc − VCEO(sus) = 60 Vdc (Min) − 2N6040, 2N6043 = 100 Vdc (Min) − 2N6042, 2N6045 • Low Collector−Emitter Saturation Voltage − VCE(sat) = 2.0 Vdc (Max) @ IC = 4.0 Adc − 2N6043,44 = 2.0 Vdc (Max) @ IC = 3.0 Adc − 2N6042, 2N6045 • Monolithic Construction with Built−In Base−Emitter Shunt Resistors • Epoxy Meets UL 94 V−0 @ 0.125 in • ESD Ratings: Human .

2N6043 : ·With TO-220C package ·Complement to type 2N6040/6041/6042 ·DARLINGTON ·High DC current gain ·Low collector saturation voltage · APPLICATIONS ·For general-purpose amplifier and low-speed switching applications PINNING PIN 1 2 3 DESCRIPTION Base Collector;connected to mounting base Emitter Absolute maximum ratings(Tc=25 ) SYMBOL PARAMETER 2N6043 VCBO Collector-base voltage 2N6044 2N6045 2N6043 VCEO Collector-emitter voltage 2N6044 2N6045 VEBO Emitter-base voltage IC Collector current-DC ICM Collector current-Peak IB Base current-DC PD Total power dissipation Tj Junction temperature Tstg Storage temperature CONDITIONS Open emitter Open base Open collector TC=25 Ta=25 THERM.

2N6043 : www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N6040/D Plastic Medium-Power Complementary Silicon Transistors designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 100 mAdc — VCEO(sus) = 60 Vdc (Min) — 2N6040, 2N6043 VCEO(sus) = 80 Vdc (Min) — 2N6041, 2N6044 VCEO(sus) = 100 Vdc (Min) — 2N6042, 2N6045 • Low Collector–Emitter Saturation Voltage — VCE(sat) = 2.0 Vdc (Max) @ IC = 4.0 Adc — 2N6040,41, 2N6043,44 VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc — 2N6042, 2N6045 • Monolithic Construction with Built–In Base–Emitter Shunt Resisto.

2N6043 : The CENTRAL SEMICONDUCTOR 2N6040 and 2N6043 Series types are Complementary Silicon Power Transistors, manufactured by the epitaxial base process, designed for general purpose amplifier applications. MARKING: FULL PART NUMBER TO-220 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC ICM IB PD TJ, Tstg ΘJC 2N6040 2N6043 60 60 2N6041 2N6044 80 80 5.0 8.0 16 120 75 -65 to +150 1.67 2N6042 2N6045 100 100 ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL.

2N6044 : MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N6040/D Plastic Medium-Power Complementary Silicon Transistors designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 100 mAdc — VCEO(sus) = 60 Vdc (Min) — 2N6040, 2N6043 VCEO(sus) = 80 Vdc (Min) — 2N6041, 2N6044 VCEO(sus) = 100 Vdc (Min) — 2N6042, 2N6045 • Low Collector–Emitter Saturation Voltage — VCE(sat) = 2.0 Vdc (Max) @ IC = 4.0 Adc — 2N6040,41, 2N6043,44 VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc — 2N6042, 2N6045 • Monolithic Construction with Built–In Base–Emitter Shunt Resistors MAXIMUM RATINGS (.




Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)