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RU30E7H

Ruichips
Part Number RU30E7H
Manufacturer Ruichips
Description N-Channel Advanced Power MOSFET
Published Apr 26, 2016
Detailed Description RU30E7H N-Channel Advanced Power MOSFET MOSFET Features • 30V/7.8A, RDS (ON) =16mΩ (Typ.) @ VGS=10V RDS (ON) =25mΩ (Typ...
Datasheet PDF File RU30E7H PDF File

RU30E7H
RU30E7H

Overview
RU30E7H N-Channel Advanced Power MOSFET MOSFET Features • 30V/7.
8A, RDS (ON) =16mΩ (Typ.
) @ VGS=10V RDS (ON) =25mΩ (Typ.
) @ VGS=4.
5V • Super High Dense Cell Design • Reliable and Rugged • ESD Protected • Lead Free and Green Available Pin Description SOP-8 Applications • Power Management • Converters Absolute Maximum Ratings N-Channel MOSFET Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TA=25°C Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested TA=25°C ID PD ② RθJA Continuous Drain Current(VGS=10V) TA=25°C TA=70°C Maximum Power Dissipation TA=25°C TA=70°C Thermal Resistance-Junction to Ambient Rating 30 ±20 150 -55 to 150 3 ① 30 7.
8 6.
3 2.
5 1.
6 50 Unit V °C °C A A A W °C/W Copyright© Ruichips Semiconductor Co.
, Ltd Rev.
A– OCT.
, 2011 www.
ruichips.
com RU30E7H Electrical Characteristics (TA=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU30E7H Unit Min.
Typ.
Max.
Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) Gate Threshold Voltage IGSS Gate Leakage Current VGS=0V, IDS=250µA VDS= 30V, VGS=0V TJ=85°C VDS=VGS, IDS=250µA VGS=±16V, VDS=0V ③ RDS(ON) Drain-Source On-state Resistance VGS= 10V, IDS=7A VGS= 4.
5V, IDS=5A 30 1 V 1 µA 30 1.
8 2.
5 V ±10 µA 16 20 mΩ 25 40 mΩ Diode Characteristics ③ VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ④ Dynamic Characteristics RG Gate Resistance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time tr Turn-on Rise Time td(OFF) Turn-off Delay Time tf Turn-off Fall Time ④ Gate Charge Characteristics Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge ISD=2.
5A, VGS=0V ISD=7A, dlSD/dt=100A/µs VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS=15V, Frequency=1.
0MHz V...


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