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AO4304

Alpha & Omega Semiconductors
Part Number AO4304
Manufacturer Alpha & Omega Semiconductors
Description N-Channel MOSFET
Published Apr 28, 2016
Detailed Description AO4304 30V N-Channel MOSFET General Description Product Summary The AO4304 combines advanced trench MOSFET technology...
Datasheet PDF File AO4304 PDF File

AO4304
AO4304

Overview
AO4304 30V N-Channel MOSFET General Description Product Summary The AO4304 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).
This device is ideal for load switch and battery protection applications.
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.
5V) 100% UIS Tested 100% Rg Tested 30V 18A < 6.
0mΩ < 7.
6mΩ Top View D D D D SOIC-8 Bottom View D G S S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current TA=70°C Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.
1mH C ID IDM IAS, IAR EAS, EAR TA=25°C Power Dissipation B TA=70°C PD Junction and Storage Temperature Range TJ, TSTG G Maximum 30 ±20 18 14 200 35 61 3.
6 2.
3 -55 to 150 S Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead t ≤ 10s Steady-State Steady-State Symbol RθJA RθJL Typ 27 52 12 Max 35 65 15 Units V V A A mJ W °C Units °C/W °C/W °C/W Rev 0: Oct 2010 www.
aosmd.
com Page 1 of 6 AO4304 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 30 V IDSS Zero Gate Voltage Drain Current VDS=30V, VGS=0V TJ=55°C 1 µA 5 IGSS Gate-Body leakage current VDS=0V, VGS= ±20V 100 nA VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.
4 1.
9 2.
4 V ID(ON) On state drain current VGS=10V, VDS=5V 200 A RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=15A TJ=125°C 4.
1 6 6.
5 9.
5 mΩ VGS=4.
5V, ID=10A 5 7.
6 mΩ gFS Forward Transconductance VDS=5V, ID=15A 90 S VSD Diode Forward Voltage IS=1A,VGS=0V 0.
7 1 V IS Maximum Body-Diode Continuous Current 5A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=1...


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