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AO4354

Alpha & Omega Semiconductors
Part Number AO4354
Manufacturer Alpha & Omega Semiconductors
Description N-Channel AlphaMOS
Published Apr 28, 2016
Detailed Description AO4354 30V N-Channel AlphaMOS General Description • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on...
Datasheet PDF File AO4354 PDF File

AO4354
AO4354

Overview
AO4354 30V N-Channel AlphaMOS General Description • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.
5VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.
5V) Application • DC/DC Converters in Computing, Servers, and POL • Isolated DC/DC Converters in Telecom and Industrial 100% UIS Tested 100% Rg Tested 30V 23A < 3.
7mΩ < 5.
3mΩ Top View D D D D SOIC-8 Bottom View G S S S D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TA=25°C TA=100°C ID Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.
1mH C IDM IAS EAS VDS Spike 100ns VSPIKE TA=25°C Power Dissipation B TA=100°C PD Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 23 14 174 37 68 36 3.
1 1.
2 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead t ≤ 10s Steady-State Steady-State Symbol RθJA RθJL Typ 31 59 16 Max 40 75 24 Units V V A A mJ V W °C Units °C/W °C/W °C/W Rev0: April 2012 www.
aosmd.
com Page 1 of 5 AO4354 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 30 V IDSS Zero Gate Voltage Drain Current VDS=30V, VGS=0V TJ=55°C 1 µA 5 IGSS Gate-Body leakage current VDS=0V, VGS= ±20V 100 nA VGS(th) Gate Threshold Voltage VDS=VGS, ID=250µA 1.
2 1.
8 2.
2 V RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=20A TJ=125°C 3 3.
7 mΩ 4.
1 5 VGS=4.
5V, ID=20A 4.
1 5.
3 mΩ gFS Forward Transconductance VDS=5V, ID=20A 105 S VSD Diode Forward Voltage IS=1A,VGS=0V 0.
7 1 V IS Maximum Body-Diode Continuous Current 4A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfe...


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