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MTE130N20FP

CYStech
Part Number MTE130N20FP
Manufacturer CYStech
Description N & P-Channel Enhancement Mode Power MOSFET
Published Apr 28, 2016
Detailed Description CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTE130N20FP Spec. No. : C966FP Issued Date : 2014.05....
Datasheet PDF File MTE130N20FP PDF File

MTE130N20FP
MTE130N20FP


Overview
CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET MTE130N20FP Spec.
No.
: C966FP Issued Date : 2014.
05.
13 Revised Date : 2014.
05.
15 Page No.
: 1/ 8 BVDSS ID @ VGS=10V RDS(ON)@VGS=10V, ID=9A 200V 17A 150 mΩ(typ) Features • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • Insulating package, front/back side insulating voltage=2500V(AC) • RoHS compliant package Symbol MTE130N20FP Outline TO-220FP G:Gate D:Drain S:Source GDS Ordering Information Device MTE130N20FP-0-UB-S Package TO-220FP (RoHS compliant package) Shipping 50 pcs/tube, 20 tubes/box, 4 boxes / carton Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, UB : 50 pcs / tube, 20 tubes/box Product rank, zero for no rank products Product name MTE130N20FP CYStek Product Specification CYStech Electronics Corp.
Spec.
No.
: C966FP Issued Date : 2014.
05.
13 Revised Date : 2014.
05.
15 Page No.
: 2/ 8 Absolute Maximum Ratings (TC=25°C) Parameter Drain-Source Voltage (Note 1) Gate-Source Voltage Continuous Drain Current @TC=25°C, VGS=10V (Note 1) Continuous Drain Current @TC=100°C, VGS=10V (Note 1) Continuous Drain Current @TA=25°C, VGS=10V (Note 2) Continuous Drain Current @TA=70°C, VGS=10V (Note 2) Pulsed Drain Current @ VGS=10V (Note 3) Avalanche Current (Note 3) Single Pulse Avalanche Energy @ L=1mH, ID=3.
5 Amps, VDD=50V (Note 2) TC=25°C (Note 1) Power Dissipation TC=100°C TA=25°C (Note 1) (Note 2) TA=70°C (Note 2) Maximum Temperature for Soldering @ Lead at 0.
063 in(1.
6mm) from case for 10 seconds Maximum Temperature for Soldering @ Package Body for 10 seconds Operating Junction and Storage Temperature *Drain current limited by maximum junction temperature Symbol VDS VGS ID IDSM IDM IAS EAS PD PDSM TL Limits 200 ±20 17* 12* 3.
4 2.
7 34* 3.
5 6 50 25 2 1.
3 300 TPKG 260 Tj, Tstg -55~+175 Unit V A mJ W °C Thermal Data Parameter Thermal Resistance, Juncti...



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