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BAS116WS

Pan Jit International
Part Number BAS116WS
Manufacturer Pan Jit International
Description LOW LEAKAGE SWITCHING DIODE
Published Apr 28, 2016
Detailed Description BAS116WS SURFACE MOUNT, LOW LEAKAGE SWITCHING DIODE VOLTAGE 100 Volts POWER 200mWatts SOD-323 FEATURES • Suface mou...
Datasheet PDF File BAS116WS PDF File

BAS116WS
BAS116WS

Overview
BAS116WS SURFACE MOUNT, LOW LEAKAGE SWITCHING DIODE VOLTAGE 100 Volts POWER 200mWatts SOD-323 FEATURES • Suface mount package ideally suited for automatic insertion.
• Very low leakage current.
2pA typical at VR=75V.
• Low capacitance.
2pF max at VR=0V, f=1MHz • In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA • Case: SOD-323 plastic • Terminals: Solderable per MIL-STD-750, Method 2026 • Approx weight: 0.
00014 gram • Marking: PA .
054(1.
35) .
045(1.
15) .
078(1.
95) .
068(1.
75) Unit: inch (mm) .
014(.
35) .
009(.
25) .
038(.
95) .
027(.
70) .
006(.
15) .
002(.
05) .
107(2.
7) .
090(2.
3) .
012(.
30)MIN.
ABSOLUTE RATINGS (each diode) Reverse Voltage PA RA ME TE R Peak Reverse Voltage Continuous Forward Current Non-repetitive Peak Forward Surge Current at t=1.
0us S ym b o l VR V RM IF I FSM THERMAL CHARACTERISTICS PA RA ME TE R Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) J u n c t i o n Te m p e r a t u r e S t o r a g e Te m p e r a t u r e S ym b o l P TOT RθJA TJ TSTG NOTE: 1.
FR-5 Board = 1.
0 x 0.
75 x 0.
062 in.
Value 75 100 0.
2 2.
0 Value 200 625 -55 to 150 -55 to 150 Uni ts V V A A Uni ts mW O C /W OC OC STAD-SEP.
07.
2007 PAGE .
1 BAS116WS ELECTRICAL CHARACTERISTICS (each diode) (TA=25OC, unless otherwise noted) PARAMETER Reverse Breakdown Voltage Reverse Current Forward Voltage To t a l C a p a c i t a nc e Re ve rs e Re c o ve ry Ti me S ym b o l Te s t C o nd i t i o n V (BR) IR VF CT IR=100 uA VR=75 V VR=75 V,TJ=150 OC IF = 1 m A IF = 1 0 m A IF = 5 0 m A IF = 1 5 0 m A VR=0 V, f=1MHZ trr IF=IR=1 0 mA , RL=1 0 0 Ω MIN.
75 TYP.
0.
002 8.
0 MAX.
5 80 0.
9 1.
0 1.
1 1.
25 2.
0 3.
0 Uni ts V nA V pF us CHARACTERISTIC CURVES (each diode) IR, Reverse Leakage(nA) 10 1.
0 0.
1 VR=75V 0.
01 0.
001 0 50 100 150 200 Tj, Junction Temperature (Deg C) Fig.
1-Reverse Leakage vs.
Junction Temperature IF, Forward current (mA) 1000 100 10 TA=-25OC 1.
0 TA=75OC 0.
1 0.
2 TA=125OC TA=25OC 0.
4 0.
6 0.
8 1.
0 VF, Forwar...


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