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BAS116

nexperia
Part Number BAS116
Manufacturer nexperia
Description Low-leakage diode
Published May 3, 2021
Detailed Description BAS116 Low-leakage diode 5 August 2020 Product data sheet 1. General description Epitaxial medium-speed switching diod...
Datasheet PDF File BAS116 PDF File

BAS116
BAS116



Overview
BAS116 Low-leakage diode 5 August 2020 Product data sheet 1.
General description Epitaxial medium-speed switching diode with a low leakage current in a small SOT23 plastic SMD package.
2.
Features and benefits • Plastic SMD package • Low leakage current: typ.
3 pA • Switching time: typ.
0.
8 us • Continuous reverse voltage: max.
75 V • Repetitive peak reverse voltage: max.
85 V • Repetitive peak forward current: max.
500 mA.
• AEC-Q101 qualified 3.
Applications • Low leakage current applications in surface mounted circuits.
4.
Quick reference data Table 1.
Quick reference data Symbol Parameter Conditions IF VRRM forward current tp ≤ 300 µs; δ ≤ 0.
02; Tamb = 25 °C repetitive peak reverse Tj = 25 °C voltage VF forward voltage IF = 50 mA; tp ≤ 300 µs; δ ≤ 0.
02; Tj = 25 °C IR reverse current VR = 75 V; pulsed; Tj = 25 °C trr reverse recovery time IF = 10 mA; IR = 10 mA; RL = 100 Ω; IR(meas) = 1 mA; Tj = 25 °C Min Typ Max Unit - - 215 mA - - 85 V - - 1.
1 V - 0.
003 5 nA - 0.
8 3 µs 5.
Pinning information Table 2.
Pinning information Pin Symbol Description 1 A anode 2 n.
c.
not connected 3 K cathode Simplified outline 3 1 2 SOT23 Graphic symbol K A n.
c.
006aaa764 Nexperia BAS116 Low-leakage diode 6.
Ordering information Table 3.
Ordering information Type number Package Name BAS116 SOT23 Description Version plastic, surface-mounted package; 3 terminals; 1.
9 mm pitch; 2.
9 SOT23 mm x 1.
3 mm x 1 mm body 7.
Marking Table 4.
Marking codes Type number BAS116 [1] % = placeholder for manufacturing site code Marking code[1] JV% 8.
Limiting values Table 5.
Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min VRRM repetitive peak reverse Tj = 25 °C - voltage VR reverse voltage - IF forward current tp ≤ 300 µs; δ ≤ 0.
02; Tamb = 25 °C - IFSM non-repetitive peak tp = 1 µs; square wave; Tj(init) = 25 °C - forward current tp = 1 ms; sq...



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