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BAS116

Infineon
Part Number BAS116
Manufacturer Infineon
Description Silicon Low Leakage Diode
Published Mar 7, 2018
Detailed Description Silicon Low Leakage Diode • Low-leakage applications • Medium speed switching times • Pb-free (RoHS compliant) package1)...
Datasheet PDF File BAS116 PDF File

BAS116
BAS116



Overview
Silicon Low Leakage Diode • Low-leakage applications • Medium speed switching times • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101 BAS116.
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BAS116 !  Type BAS116 Package SOT23 Configuration single Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Diode reverse voltage Peak reverse voltage Forward current Non-repetitive peak surge forward current t = 1 µs VR VRM IF IFSM t=1s Total power dissipation TS ≤ 54°C Junction temperature Storage temperature Ptot Tj Tstg Thermal Resistance Parameter Junction - soldering point2) BAS116 Symbol RthJS 1Pb-containing package may be available upon special request 2For calculation of RthJA please refer to Application Note Thermal Resistance Marking JVs Value 80 85 250 4.
5 0.
5 370 Unit V mA A mW 150 -65 .
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150 °C Value ≤ 260 Unit K/W 1 2007-04-19 BAS116.
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Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values min.
typ.
DC...



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