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HAT1047RJ

Renesas
Part Number HAT1047RJ
Manufacturer Renesas
Description Silicon P-Channel Power MOSFET
Published May 1, 2016
Detailed Description www.DataSheet4U.com HAT1047R, HAT1047RJ Silicon P Channel Power MOS FET High Speed Power Switching Features • For Autom...
Datasheet PDF File HAT1047RJ PDF File

HAT1047RJ
HAT1047RJ


Overview
www.
DataSheet4U.
com HAT1047R, HAT1047RJ Silicon P Channel Power MOS FET High Speed Power Switching Features • For Automotive Application (at Type Code "J") • Low on-resistance • Capable of –4.
5 V gate drive • High density mounting Outline REJ03G0074-0500Z (Previous ADE-208-1545D(Z)) Rev.
5.
00 Aug.
27.
2003 SOP-8 DataShe8et746U5.
com 56 7 8 DD D D 1 234 4 G SSS 12 3 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain DataShee DataSheet4U.
com Rev.
5.
00, Aug.
27.
2003, page 1 of 9 www.
DataSheet4U.
com et4U.
com HAT1047R, HAT1047RJ Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current HAT1047R HAT1047RJ Avalanche energy HAT1047R HAT1047RJ Channel dissipation VDSS VGSS ID ID(pulse)Note1 IDR IAP Note3 EAR Note3 Pch Note2 –30 ±20 –14 –112 –14 — –14 — 19.
6 2.
5 Channel temperature Tch 150 Storage temperature Tstg –55 to +150 Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1 % 2.
When using the glass epoxy board (FR4 40 x 40 x 1.
6 mm), PW ≤ 10s 3.
Value at Tch = 25°C, Rg ≥ 50 Ω DataSheet4U.
com Unit V V A A A — A — mJ W °C °C DataShee DataSheet4U.
com Rev.
5.
00, Aug.
27.
2003, page 2 of 9 www.
DataSheet4U.
com et4U.
com HAT1047R, HAT1047RJ Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Drain to source breakdown voltage V(BR)DSS –30 Gate to source breakdown voltage V(BR)GSS ±20 Gate to source leak current IGSS — Zero gate voltage drain current IDSS — Zero gate voltage HAT1047R IDSS — drain current HAT1047RJ IDSS — Gate to source cutoff voltage VGS(off) –1.
0 Static drain to source on state RDS(on) — resistance RDS(on) — Forward transfer admittance |yfs| 9.
6 Input capacitance Ciss — — — — — — — — 10 19 16 3500 — — ±10 ±1 — –20 –2.
5 12 25 — — Output capacitance Coss — 750 — Reverse transfer capacitance Crss — 520 — Total gate charge Qg — 64 — Gate to source charge Gate to drain charge Qgs — 10 — Qgd D...


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