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HAT1047R

Renesas Technology
Part Number HAT1047R
Manufacturer Renesas Technology
Description Silicon P-Channel Power MOSFET
Published Oct 9, 2006
Detailed Description www.DataSheet4U.com HAT1047R, HAT1047RJ Silicon P Channel Power MOS FET High Speed Power Switching REJ03G0074-0500Z (Pr...
Datasheet PDF File HAT1047R PDF File

HAT1047R
HAT1047R

Overview
www.
DataSheet4U.
com HAT1047R, HAT1047RJ Silicon P Channel Power MOS FET High Speed Power Switching REJ03G0074-0500Z (Previous ADE-208-1545D(Z)) Rev.
5.
00 Aug.
27.
2003 Features • • • • For Automotive Application (at Type Code "J") Low on-resistance Capable of –4.
5 V gate drive High density mounting Outline SOP-8 5 DataSheet4U.
com 7 6 8 DataShee 5 6 7 8 D D D D 3 1 2 4 4 G S S S 1 2 3 1, 2, 3 4 5, 6, 7, 8 Source Gate Drain DataSheet4U.
com Rev.
5.
00, Aug.
27.
2003, page 1 of 9 www.
DataSheet4U.
com HAT1047R, HAT1047RJ Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current HAT1047R HAT1047RJ Avalanche energy HAT1047R HAT1047RJ Channel dissipation Channel temperature Storage temperature Pch Tch Tstg Note2 Symbol VDSS VGSS ID ID(pulse)Note1 IDR IAP Note3 Ratings –30 ±20 –14 –112 –14 — –14 Unit V V A A A — A — mJ W °C °C EAR Note3 — 19.
6 2.
5 150 –55 to +150 et4U.
com Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1 % 2.
When using the glass epoxy board (FR4 40 x 40 x 1.
6 mm), PW ≤ 10s 3.
Value at Tch = 25°C, Rg ≥ 50 Ω DataShee DataSheet4U.
com DataSheet4U.
com Rev.
5.
00, Aug.
27.
2003, page 2 of 9 www.
DataSheet4U.
com HAT1047R, HAT1047RJ Electrical Characteristics (Ta = 25°C) Item Symbol Min –30 Typ — — — — — — — 10 19 16 3500 750 520 64 10 Max — — ±10 ±1 — –20 –2.
5 12 25 — — — — — — Unit V mV µA µA µA µA V mΩ mΩ S pF pF pF nc nc nc ns ns ns ns V ns Test Conditions ID = –10 mA, VGS = 0 IG = ±100 µA, VDS = 0 VGS = ± 16V, VDS = 0 VDS = –30 V, VGS = 0 VDS = –24 V, VGS = 0 Ta = 125°C VDS = –10 V, ID = –1 mA ID = –7 A, VGS = –10 V Note4 ID = –7 A, VGS = –4.
5 V Note4 ID = –7 A, VDS = –10 V Note4 VDS = –10 V VGS = 0 f = 1 MHz VDD = –10 V VGS = –10 V ID = –14 A VGS = –10 V, ID = –7A VDD ≅ –10 V RL = 1.
43 Ω RL = 4.
7 Ω IF = –14 A, VGS = 0 Note4 IF = –14 A, VGS = 0 diF/ dt = 100 A/µs Drain to source breakdown voltage V(BR)DSS Gate to source leak current Zero...


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