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V40100PGW

Vishay
Part Number V40100PGW
Manufacturer Vishay
Description Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Published May 3, 2016
Detailed Description www.vishay.com V40100PGW Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Lo...
Datasheet PDF File V40100PGW PDF File

V40100PGW
V40100PGW

Overview
www.
vishay.
com V40100PGW Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.
42 V at IF = 5 A TMBS® FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max.
10 s, per JESD 22-B106 • Material categorization: For definitions of compliance please see www.
vishay.
com/doc?99912 TO-3PW PIN 1 PIN 3 PIN 2 CASE TYPICAL APPLICATIONS For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters and reverse battery protection.
PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM EAS at L = 70 mH VF at IF = 20 A TJ max.
Package 2 x 20 A 100 V 250 A 250 mJ 0.
67 V 150 °C TO-3PW Diode variations Dual common cathode MECHANICAL DATA Case: TO-3PW Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum   MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Maximum repetitive peak reverse voltage Maximum average forward rectified current (fig.
1) per device per diode VRRM IF(AV) Peak forward surge current 8.
3 ms single half sine-wave superimposed on rated load per diode IFSM Non-repetitive avalanche energy at TJ = 25 °C, L = 70 mH per diode Peak repetitive reverse current at tp = 2 μs, 1 kHz, TJ = 38 °C ± 2 °C per diode Voltage rate of change (rated VR) Operating junction and storage temperature range EAS IRRM dV/dt TJ, TSTG V40100PGW 100 40 20 250 250 1.
0 10 000 -40 to +150 UNIT V A A mJ A V/μs °C Revision: 22-Dec-13 1 Document Number: 89180 For technical questions within your region: DiodesAmericas@vishay.
com, DiodesAsia@vishay.
com, DiodesEurope@vishay.
com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE.
THE PRODUCTS DESCRIB...


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