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V40100PG

Vishay Siliconix
Part Number V40100PG
Manufacturer Vishay Siliconix
Description Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Published May 3, 2010
Detailed Description V40100PG New Product Vishay General Semiconductor www.DataSheet4U.com Dual High-Voltage Trench MOS Barrier Schottky R...
Datasheet PDF File V40100PG PDF File

V40100PG
V40100PG

Overview
V40100PG New Product Vishay General Semiconductor www.
DataSheet4U.
com Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.
420 V at IF = 5 A FEATURES • • • • • • Trench MOS Schottky Technology Low forward voltage drop, low power losses High efficiency operation Low thermal resistance Solder Dip 260 °C, 40 seconds Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 3 2 1 TO-247AD (TO-3P) PIN 1 PIN 3 PIN 2 CASE TYPICAL APPLICATIONS For use in high frequency inverters, switching power supplies, free-wheeling diodes, oring diode, dc-to-dc converters and reverse battery protection.
MECHANICAL DATA Case: TO-247AD (TO-3P) Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002B and JESD22-B102D E3 suffix for commercial grade Polarity: As marked Mounting Torque: 10 in-lbs Maximum MAJOR RATINGS AND CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 20 A Tj max.
2 x 20 A 100 V 250 A 0.
67 V 150 °C MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Maximum average forward rectified (see Fig.
1) Peak forward surge current 10 ms single half sine-wave superimposed on rated load per diode Peak repetitive reverse current per diode at tp = 2 µs, 1 kHz Voltage rate of change (rated VR) Operating junction and storage temperature range per device per diode SYMBOL VRRM IF(AV) IFSM IRRM dv/dt TJ, TSTG V40100PG 100 40 20 250 1.
0 10000 - 40 to + 150 UNIT V A A A V/µs °C ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Breakdown voltage TEST CONDITIONS at IR = 1.
0 mA at IF = 5 A IF = 10 A IF = 20 A at IF = 5 A IF = 10 A IF = 20 A TJ = 25 °C TJ = 25 °C VF TJ = 125 °C SYMBOL V(BR) TYP.
100 (minimum) 0.
490 0.
572 0.
731 0.
42 0.
50 0.
67 MAX.
0.
81 V 0.
73 UNIT V Instantaneous forward voltage (1) per diode Document Number 88972 18-Aug-06 www.
vishay.
com 1 V40100PG Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise ...


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