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2SA1429
Silicon PNP Epitaxial Type Transistor
Description
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1429 Power Amplifier Applications Power Switching Applications 2SA1429 Unit: mm Low collector saturation
voltage
: VCE (sat) = −0.5 V (max) (IC = −1 A) High-speed switching: tstg = 1.0 μs (typ.) Complementary to 2SC3669. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Ratin...
Toshiba Semiconductor
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