BSH112
N-channel enhancement mode field-effect transistor
Rev. 01 — 25 August 2000
M3D088
Product specification
1. Description
N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: BSH112 in SOT23.
2. Features
s s s s s TrenchMOS™ technology Very fast switching Logic level compatible Submi...
